|
Details, datasheet, quote on part number:PHX3N50E
| |
| Part: | PHX3N50E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | PHX3N50E; Powermos Transistors Avalanche Energy Rated |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHX3N50E datasheet File size : 60 kB |
| Request For quote: | Find where to buy PHX3N50E
|
| |
Datasheet text preview:
Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
· Repetitive Avalanche Rated · Fast switching · Stable off-state characteristics · High thermal cycling performance · Isolated package
PHX3N50E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 500 V
g
ID = 2.1 A RDS(ON) 3
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX3N50E is supplied in the SOT186A full pack, isolated package.
PINNING
PIN 1 2 3 case gate drain source isolated DESCRIPTION
SOT186A
case
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 °C to 150°C Tj = 25 °C to 150°C; RGS = 20 k Ths = 25 °C; VGS = 10 V Ths = 100 °C; VGS = 10 V Ths = 25 °C Ths = 25 °C MIN. - 55 MAX. 500 500 ± 30 2.1 1.3 14 30 150 UNIT V V V A A A W °C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS MIN. MAX. 212 UNIT mJ Unclamped inductive load, IAS = 2.1 A; tp = 0.31 ms; Tj prior to avalanche = 25°C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 3.4 A; tp = 2.5 µs; Tj prior to avalanche = 25°C; RGS = 50 ; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current
EAR IAS, IAR
-
5.5 3.4
mJ A
1 pulse width and repetition rate limited by Tj max. December 1998 1 Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 °C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP.
PHX3N50E
MAX. 2500
UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. MAX. UNIT 55 4.1 K/W K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage temperature coefficient RDS(ON) Drain-source on resistance VGS(TO) Gate threshold voltage gfs Forward transconductance IDSS Drain-source leakage current IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ls Ciss Coss Crss V(BR)DSS CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA MIN. 500 2.0 1 TYP. MAX. UNIT 0.1 2.5 3.0 2 1 30 10 26 2 13 10 29 66 32 4.5 7.5 310 50 28 3 4.0 25 250 200 30 3 17 V %/K V S µA µA nA nC nC nC ns ns ns ns nH nH pF pF pF
VGS = 10 V; ID = 1.7 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 1.7 A VDS = 500 V; VGS = 0 V VDS = 400 V; VGS = 0 V; Tj = 125 °C Gate-source leakage current VGS = ±30 V; VDS = 0 V Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance ID = 3.4 A; VDD = 400 V; VGS = 10 V VDD = 250 V; RD = 68 ; RG = 18
Measured from drain lead to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
December 1998
2
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Ths = 25°C Ths = 25°C IS = 3.4 A; VGS = 0 V IS = 3.4 A; VGS = 0 V; dI/dt = 100 A/µs MIN. -
PHX3N50E
TYP. MAX. UNIT 370 2.7 3.4 14 1.2 A A V ns µC
December 1998
3
Rev 1.200
|
|
