|
Details, datasheet, quote on part number:PHP69N03T
| |
| Part: | PHP69N03T |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Trenchmos (tm) Transistor Standard Level Fet |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHP69N03T datasheet File size : 51 kB |
| Request For quote: | Find where to buy PHP69N03T
|
| |
Datasheet text preview:
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHP69N03T
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 69 125 175 14 UNIT V A W °C m
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Tmb = 25 °C Tmb = 100 °C Tmb = 25 °C Tmb = 25 °C MIN. - 55 MAX. 30 30 20 69 48 240 125 175 UNIT V V V A A A W °C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP. 60 MAX. 1.2 UNIT K/W K/W
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
STATIC CHARACTERISTICS
Tj= 25°C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS ±V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source breakdown voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55°C VDS = VGS; ID = 1 mA Tj = 175°C Tj = -55°C VDS = 30 V; VGS = 0 V; VGS = ±10 V; VDS = 0 V IG = ±1 mA; VGS = 10 V; ID = 25 A Tj = 175°C Tj = 175°C Tj = 175°C MIN. 30 27 2.0 1.0 16 TYP. 3.0 0.05 0.02 12 -
PHP69N03T
MAX. 4.0 4.4 10 500 1 20 14 26
UNIT V V V V V µA µA µA µA V m m
DYNAMIC CHARACTERISTICS
Tmb = 25°C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A ID = 69 A; VDD = 24 V; VGS = 10 V MIN. 9 TYP. 18 38 7 21 1500 480 220 22 30 40 25 3.5 4.5 7.5 MAX. 2000 550 300 35 60 50 38 UNIT S nC nC nC pF pF pF ns ns ns ns nH nH nH
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 25 V; ID = 25 A; VGS = 10 V; RG = 5 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25°C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 69 A; VGS = 0 V IF = 69 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 25 V TYP. 0.95 1.0 60 0.1
PHP69N03T
MAX. 69 240 1.2 -
UNIT A A V V ns µC
AVALANCHE LIMITING VALUE
SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 36 A; VDD 15 V; VGS = 10 V; RGS = 50 ; Tmb = 25 °C MIN. TYP. MAX. 125 UNIT mJ
September 1997
3
Rev 1.100
|
|
