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Details, datasheet, quote on part number:PHP5N20E
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| Part: | PHP5N20E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | PHP5N20E; Powermos Transistor |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHP5N20E datasheet File size : 53 kB |
| Request For quote: | Find where to buy PHP5N20E
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Datasheet text preview:
Philips Semiconductors
Product specification
PowerMOS transistor
PHP5N20E
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 200 5.0 60 0.9 UNIT V A W
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
1 23
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ID IDM PD PD/Tmb VGS EAS IAS Tj, Tstg Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 °C; VGS = 10 V Tmb = 100 °C; VGS = 10 V Tmb = 25 °C Tmb = 25 °C Tmb > 25 °C VDD 50 V; starting Tj = 25°C; RGS = 50 ; VGS = 10 V VDD 50 V; starting Tj = 25°C; RGS = 50 ; VGS = 10 V MIN. - 55 MAX. 5 3.5 20 60 0.4 ± 30 40 5 175 UNIT A A A W W/K V mJ A °C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2.5 UNIT K/W K/W
October 1997
1
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistor
PHP5N20E
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL V(BR)DSS V(BR)DSS / Tj RDS(ON) VGS(TO) gfs IDSS IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ld Ls Ciss Coss Crss PARAMETER Drain-source breakdown voltage Drain-source breakdown voltage temperature coefficient Drain-source on resistance Gate threshold voltage Forward transconductance Drain-source leakage current Gate-source leakage current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA VGS = 10 V; ID = 2.5 A VDS = VGS; ID = 0.25 mA VDS = 50 V; ID = 2.5 A VDS = 200 V; VGS = 0 V VDS = 160 V; VGS = 0 V; Tj = 150 °C VGS = ±30 V; VDS = 0 V ID = 4.8 A; VDD = 160 V; VGS = 10 V MIN. 200 2.0 1.5 TYP. 0.25 0.68 3.0 3.5 0.1 1 10 11 2 5.3 7 29 27 22 3.5 4.5 7.5 300 60 20 MAX. 0.9 4.0 25 250 100 15 3 7 UNIT V V/K V S µA µA nA nC nC nC ns ns ns ns nH nH nH pF pF pF
VDD = 100 V; ID = 4.8 A; RG = 18 ; RD = 20
Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL IS ISM VSD trr Qrr PARAMETER Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Tmb = 25°C Tmb = 25°C IS = 5.2 A; VGS = 0 V IS = 4.8 A; VGS = 0 V; dI/dt = 100 A/µs MIN. TYP. 114 0.8 MAX. 5 20 1.5 UNIT A A V ns µC
October 1997
2
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistor
PHP5N20E
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
1E+01
Zth j-mb / (K/W)
BUKX52
1E+00
0.5
0.2 0.1 0.05 1E-01 0.02 0
0 20 40 60 80 100 Tmb / C 120 140 160 180
P D
tp
D=
tp T t
1E-02 1E-07
T
1E-05
1E-03 t/s
1E-01
1E+01
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 °C = f(Tmb)
ID% Normalised Current Derating
10
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
120 110 100 90 80 70 60 50 40 30 20 10 0
ID, Drain current (Amps) 10 V 7V Tj = 25 C
PHP5N20 6V
8 5.5 V 6 5V 4 VGS = 4.5 V 2
0
20
40
60
80 100 Tmb / C
120
140
160
180
0
0
5
10 15 20 VDS, Drain-Source voltage (Volts)
25
30
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 °C = f(Tmb); conditions: VGS 10 V
ID, Drain current (Amps) PHP5N20E
Fig.5. Typical output characteristics. ID = f(VDS); parameter VGS
RDS(on), Drain-Source on resistance (Ohms) 4.5 V 5V 5.5 V
100
3 2.5
PHP5N20 6V 7V
10
S RD
(O
N)
D =V
S/
ID
tp = 10 us 100 us 1 ms
2 1.5 VGS = 10 V 1 0.5 Tj = 25 C 0
1
DC
10 ms 100 ms
0.1
1
10 100 VDS, Drain-source voltage (Volts)
1000
0
2
4 6 ID, Drain current (Amps)
8
10
Fig.3. Safe operating area. Tmb = 25 °C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance. RDS(ON) = f(ID); parameter VGS
October 1997
3
Rev 1.100
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