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Details, datasheet, quote on part number:PHP55N03LTA
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| Part: | PHP55N03LTA |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | PHP/PHB/PHD55N03LTA; Trenchmos (tm) Logic Level FET;; Package: SOT78 (TO-220AB, SC-46) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHP55N03LTA datasheet File size : 302 kB |
| Request For quote: | Find where to buy PHP55N03LTA
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Datasheet text preview:
PHP/PHB/PHD55N03LTA
TrenchMOSTM Logic Level FET
Rev. 04 -- 4 September 2002 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK).
2. Features
s Low on-state resistance s Fast switching.
3. Applications
s Computer motherboard high frequency DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outlines and symbol Simplified outline
mb mb mb
Pin Description 1 2 3 mb gate (g) drain (d) source (s) mounting base, connected to drain (d)
[1]
Symbol
d
g s
2 2 1
MBK106
MBB076
1 3
MBK116
3
MBK091
Top view
123
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
SOT428 (D-PAK)
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
Philips Semiconductors
PHP/PHB/PHD55N03LTA
TrenchMOSTM Logic Level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C Tj 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Typ 11 15 Max 25 55 85 175 14 18 Unit V A W °C m m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR ID VGS IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) drain current (DC) gate-source voltage peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs unclamped inductive load; ID = 25 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 °C Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C Tj 175 °C 25 °C Tj 175 °C; RGS = 20 k Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Min -55 -55 Max 25 25 55 38 ±20 220 85 +175 +175 55 220 60 Unit V V A A V A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
9397 750 10143
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 04 -- 4 September 2002
2 of 14
Philips Semiconductors
PHP/PHB/PHD55N03LTA
TrenchMOSTM Logic Level FET
120 P der (%) 80
03aa16
120 Ider (%) 80
03aa24
40
40
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A)
03ae64
Limit RDSon = VDS / ID
tp = 10 µs
102 100 µs
10
DC
1 ms 10 ms 100 ms
1 1 10 VDS (V) 102
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10143
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 04 -- 4 September 2002
3 of 14
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