|
Details, datasheet, quote on part number:PHP54N06T
| |
| Part: | PHP54N06T |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | PHP54N06T; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT78 (TO-220AB, SC-46) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHP54N06T datasheet File size : 302 kB |
| Request For quote: | Find where to buy PHP54N06T
|
| |
Datasheet text preview:
PHP54N06T
N-channel enhancement mode field-effect transistor
Rev. 01 -- 14 February 2001
M3D307
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHP54N06T in SOT78 (TO-220AB).
2. Features
s Low on-state resistance s 175 °C rated.
3. Applications
s DC to DC converters s Switched mode power supplies.
c
4. Pinning information
c
Table 1: Pin 1 2 3 mb
Pinning - SOT78, simplified outline and symbol Description gate (g)
mb
Simplified outline
Symbol
drain (d) source (s) mounting base; connected to drain (d)
g s d
MBB076 MBK106
123
SOT78 (TO-220AB)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 17 - 20 40 Typ - - - - Max 55 54 118 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
m m
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IS ISM WDSS peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp 10 µs unclamped inductive load; ID = 48 A; VDS 55 V; VGS = 10 V; RGS = 50 ; star ting Tmb = 25 °C Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS = 20 k Conditions Min - - - - - - - -55 -55 - - - Max 55 55 ±20 54 38 217 118 +175 +175 54 217 115 Unit V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness
9397 750 08022
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 14 February 2001
2 of 13
Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
03aa24
120
Pder (%) 100
03na19
120
Ider (%)
100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125 150 175 200
Tmb (oC)
0 0 25 50 75 100 125 150 175 200
Tmb (oC)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
VGS 4.5 V ID I d e r = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
103
ID (A) RDSon = VDS/ ID
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
03nc66
102
tp = 10 us 100 us
P
10
=
tp T
D.C.
1 ms 10 ms
tp T
t
100 ms
1 1 10 VDS (V)
102
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08022
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 14 February 2001
3 of 13
|
|
