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Details, datasheet, quote on part number:PHP50N06
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| Part: | PHP50N06 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Powermos Transistor: 60v, 52a |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHP50N06 datasheet File size : 55 kB |
| Request For quote: | Find where to buy PHP50N06
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Datasheet text preview:
Philips Semiconductors
Product specification
PowerMOS transistor
PHP50N06
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 60 52 150 175 0.028 UNIT V A W °C
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
1 23
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 k Tmb = 25 °C Tmb = 100 °C Tmb = 25 °C Tmb = 25 °C MIN. - 55 MAX. 60 60 30 52 36 208 150 175 175 UNIT V V V A A A W °C °C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 1.0 UNIT K/W K/W
August 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP50N06
STATIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; Tj = 25 °C VDS = 60 V; VGS = 0 V; Tj = 125 °C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 29 A MIN. 60 2.1 TYP. 3.0 1 0.1 10 0.024 MAX. 4.0 10 1.0 100 0.028 UNIT V V µA mA nA
DYNAMIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 29 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 ; Rgen = 50 Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 17 TYP. 22 1500 800 270 20 70 170 120 3.5 4.5 7.5 MAX. 2000 1000 400 30 100 220 160 UNIT S pF pF pF ns ns ns ns nH nH nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 °C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 52 A ; VGS = 0 V IF = 52 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V MIN. TYP. 1.8 80 0.4 MAX. 52 208 2.5 UNIT A A V ns µC
August 1996
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP50N06
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
10
Zth j-mb / (K/W)
BUKx56-lv
1
D= 0.5
0.1
0.2 0.1 0.05 0.02 P D 0 tp tp T t 1E+01
0.01
D=
0
20
40
60
80 100 Tmb / C
120
140
160
180
0.001 1E-05 1E-03 t/s
T 1E-01
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 °C = f(Tmb)
ID% Normalised Current Derating
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
BUK456-50A 8
120 110 100 90 80 70 60 50 40 30 20 10 0
100
ID / A 20 15
10
80 VGS / V = 60 6 40 5 4
0 20 40 60 80 100 Tmb / C 120 140 160 180
7
20
0
0
2
4 VDS / V
6
8
10
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 °C = f(Tmb); conditions: VGS 10 V
ID / A BUK456-60
Fig.5. Typical output characteristics, Tj = 25 °C. ID = f(VDS); parameter VGS
RDS(ON) / Ohm 4 4.5 5 5.5 6 6.5 BUK456-50A
1000
0.20
100
RD
S(
ON
)=
V
DS
/ID
A B
VGS / V = 7 7.5
tp = 10 us
0.15
100 us
0.10
1 ms 10 DC 10 ms 100 ms
8
0.05 10
1 1 10 VDS / V 100
0.00 0 20 40 ID / A 60 80 100
Fig.3. Safe operating area. Tmb = 25 °C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 °C. RDS(ON) = f(ID); parameter VGS
August 1996
3
Rev 1.000
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