Details, datasheet, quote on part number: PESD3V3U1UT
PartPESD3V3U1UT
CategoryDiscrete => Diodes & Rectifiers => Protection
DescriptionUltra low capacitance ESD protection diode in SOT23 package
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line from the damage caused by ESD and other transients.



Features
Unidirectional ESD protection of one line
ESD protection > 23 kV
Ultra low diode capacitance: Cd = 0.6 pF
IEC 61000-4-2; level 4 (ESD)
Max. peak pulse power: PPP up to 200 W
IEC 61000-4-5; (surge)
Low clamping voltage



Applications
10/100/1000 Ethernet
Local Area Network (LAN) equipment
FireWire
Computers and peripherals
Communication systems
High-speed datalines
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload PESD3V3U1UT datasheet
Cross ref.Similar parts: NNCD6.2E, GSOT08, GSOT04, GSOT03, SL05, DLP05LC
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PackagesSOT23
  

 

Features, Applications

Ultra low capacitance ElectroStatic Discharge (ESD) protection diode SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line from the damage caused by ESD and other transients.

Unidirectional ESD protection of one line Ultra low diode capacitance: 0.6 pF Max. peak pulse power: PPP 200 W Low clamping voltage s ESD protection kV s IEC 61000-4-2; level 4 (ESD) s IEC 61000-4-5; (surge)

s 10/100/1000 Ethernet s FireWire s Communication systems s Local Area Network (LAN) equipment s Computers and peripherals s High-speed datalines

Table 1: Symbol VRWM Quick reference data Parameter reverse stand-off voltage PESD24VU1UT Cd

Table 2: Pin 2 3 Pinning Description cathode ESD protection diode cathode compensation diode common anode

Table 3: Ordering information Package Name PESD15VU1UT PESD24VU1UT Description plastic surface mounted package; 3 leads Version SOT23 Type number

Table 4: Marking codes Marking code [1] *AP *AQ *AR *AS *AT Type number PESD15VU1UT PESD24VU1UT
* = made in Hong Kong = p: made in Hong Kong = t: made in Malaysia = W: made in China
Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak pulse power PESD15VU1UT PESD24VU1UT IPP peak pulse current PESD24VU1UT Tj Tamb Tstg

junction temperature ambient temperature storage temperature
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.

 

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PESD15VU1UT
PESD24VU1UT
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