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Details, datasheet, quote on part number:PDTC114ET
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| Part: | PDTC114ET |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => SOT/Surface Mount |
| Description: | NPN Resistor-equipped Transistor |
| Company: | Philips Semiconductors |
| Datasheet: | Download PDTC114ET datasheet File size : 58 kB |
| Request For quote: | Find where to buy PDTC114ET
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D088
PDTC114ET NPN resistor-equipped transistor
Product specification Supersedes data of 1998 Nov 26 1999 Apr 15
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
FEATURES · Built-in bias resistors R1 and R2 (typ. 10 k each) · Simplification of circuit design · Reduces number of components and board space. APPLICATIONS · Especially suitable for space reduction in interface and driver circuits · Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA114ET.
1 3 2
1 Top view 2
MAM097
PDTC114ET
dbook, 4 columns
3 3 R1 1 R2 2
Fig.1 Simplified outline (SOT23) and symbol.
MARKING TYPE NUMBER PDTC114ET Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. MARKING CODE(1) 16
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output
MGA893 - 1
Fig.2 Equivalent inverter symbol.
1999 Apr 15
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VC B O VC E O VE B O VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO IC M Pt o t Ts t g Tj Ta m b Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IC E O IE B O hFE VC E s a t Vi ( o f f ) Vi ( o n ) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input off voltage input on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 5 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 100 µA; VCE = 5 V IC = 10 mA; VCE = 0.3 V MIN. - - - - 30 - - 2.5 7 0.8 - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 - - - - - -65 - -65 CONDITIONS open emitter open base open collector - - - MIN.
PDTC114ET
MAX. 50 50 10 40 -10 100 100 250 +150 150 +150 V V V V V
UNIT
mA mA mW °C °C °C
VALUE 500
UNIT K/W
TYP. - - - - - - 1.1 1.8 10 1 -
MAX. 100 1 50 400 - 150 0.8 - 13 1.2 2.5
UNIT nA µA µA µA mV V V k
pF
1999 Apr 15
3
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