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Details, datasheet, quote on part number:PDTC113ET
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| Part: | PDTC113ET |
| Category: | Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors) |
| Description: | NPN Resistor-equipped Transistor; R1 = 1 Kohm, R2 = 1 Kohm<<<>>>features Built-in Bias Resistors <<<>>>Reduces Component Count <<<>>>Simplifies Circuit Design <<<>>>Reduces Pick And Place Costs. <<<>>><<<>>> <<<>>> Applications General Purpose Switching And Amplification <<<>>>Circuit Driver. <<<>>>Inverter And Interface Circuits |
| Company: | Philips Semiconductors |
| Datasheet: | Download PDTC113ET datasheet File size : 43 kB |
| Request For quote: | Find where to buy PDTC113ET
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Datasheet text preview:
PDTC113ET
NPN resistor-equipped transistor; R1 = 1 k, R2 = 1 k
Rev. 02 -- 8 April 2004 Objective data sheet
1. Product profile
1.1 General description
NPN resistor-equipped transistors. PNP complement: PDTA113ET.
1.2 Features
s Built-in bias resistors s Simplifies circuit design s Reduces component count s Reduces pick and place costs.
1.3 Applications
s General purpose switching and amplification s Inver ter and interface circuits s Circuit driver.
1.4 Quick reference data
Table 1: Symbol VCEO IO R1 R2 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor bias resistor Conditions Min Typ 1 1 Max 50 100 Unit V mA k k
2. Pinning information
Table 2: Pin 1 2 3 Discrete pinning Description base emitter collector
3
R1
Simplified outline
Symbol
3 1
R2
1 Top view
2
sym007
2
Philips Semiconductors
PDTC113ET
NPN resistor-equipped transistor; R1 = 1 k, R2 = 1 k
3. Ordering information
Table 3: Ordering information Package Name PDTC113ET Description plastic surface mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4: Marking Marking code [1] *14 Type number PDTC113ET
[1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China.
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb
[1]
Conditions open emitter open base open collector
Min -
Max 50 50 10 +10 -10 100 100 250 +150 150 +150
Unit V V V V V mA mA mW °C °C °C
output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C
[1]
-65 -65
Refer to standard mounting conditions.
6. Thermal characteristics
Table 6: Symbol Rth(j-a)
[1]
Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1]
Typ 500
Unit K/W
Refer to standard mounting conditions.
9397 750 13066
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 02 -- 8 April 2004
2 of 7
Philips Semiconductors
PDTC113ET
NPN resistor-equipped transistor; R1 = 1 k, R2 = 1 k
7. Characteristics
Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO ICEO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz Conditions VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 40 mA IC = 30 mA; IB = 1.5 mA IC = 100 µA; VCE = 5 V IC = 20 mA; VCE = 300 mV Min 30 2 0.7 0.8 Typ 1 1 Max 100 1 50 4 150 500 1.3 1.2 pF mV mV V k Unit nA µA µA mA
IEBO hFE VCEsat Vi(off) Vi(on) R1 R2/R1 Cc
9397 750 13066
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 02 -- 8 April 2004
3 of 7
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