Details, datasheet, quote on part number: NTD6N40-001
PartNTD6N40-001
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel
DescriptionTmos 7 E-FET(tm) Power Field Effect Transistor: N-channel Enhancement-mode Silicon Gate: 400v, 6a
CompanyON Semiconductor
DatasheetDownload NTD6N40-001 datasheet
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Features, Applications

Advance Information Power MOSFET 6 Amps, 400 Volts

Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.

Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Industry Standard DPAK Surface Mount Package Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits

Typical Applications

Rating Drain­Source Voltage Drain­Gate Voltage (RGS 1.0 M) Gate­Source Voltage ­ Continuous ­ Non­Repetitive (tpv10 ms) Drain ­ Continuous ­ Continuous 100°C ­ Single Pulse (tpv10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation = 25°C when mounted with the minimum recommended pad size Operating and Storage Temperature Range Single Drain­to­Source Avalanche Energy ­ Starting = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, = 10 mH, 25 ) Thermal Resistance ­ Junction­to­Case ­ Junction­to­Ambient ­ Junction­to­Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID IDM PD Value Adc Unit Vdc T 4 CASE 369A DPAK STYLE 2 = Year = Work Week = MOSFET

Device NTD6N40­1 NTD6N40T4 Package DPAK Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel
1. When surface mounted an FR4 board using the minimum recommended pad size.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are recommended choices for future use and best overall value.

Characteristic OFF CHARACTERISTICS Drain­to­Source Breakdown Voltage (VGS = 0 Vdc, = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VDS = 400 Vdc, VGS = 0 Vdc) (VDS = 400 Vdc, VGS = 0 Vdc, = 125°C) Gate­Body Leakage Current (VGS = ±20 Vdc, VDS 0) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage = 0.25 mA, VDS = VGS Temperature Coefficient (Negative) Static Drain­to­Source On­Resistance (VGS = 10 Vdc, = 3 Adc) Drain­to­Source On­Voltage (VGS = 10 Vdc, = 6 Adc) (VGS = 10 Vdc, = 3 Adc, = 125°C) Forward Transconductance (VDS = 15 Vdc, = 3 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Gate Charge (VDS = 320 Vdc, = 6 Adc, VGS = 10 Vdc) (VDD = 200 Vdc, = 6 Adc, VGS = 10 Vdc, Vdc 9.1 ) td(on) tr td(off) Q2 Q3 SOURCE­DRAIN DIODE CHARACTERISTICS Forward On­Voltage (Note 2.) (IS = 6 Adc, VGS = 0 Vdc) (IS = 6 Adc, VGS = 0 Vdc, = 125°C) Reverse Recovery Time (IS = 6 Adc Adc, VGS = 0 Vdc, Vdc diS/dt = 100 A/µs) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. trr ta tb QRR VSD µC ns Vdc nC ns (VDS 25 Vd Vdc, VGS = 0 Vdc, = 1.0 MHz) Ciss Coss Crss pF VGS(th) 2.0 ­ RDS(on) VDS(on) ­ gFS mhos Vdc mV/°C mOhm Vdc V(BR)DSS 400 ­ IDSS ­ IGSS(f) IGSS(r) nAdc Vdc mV/°C µAdc Symbol Min Typ Max Unit


 

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