Details, datasheet, quote on part number: NTD60N03-001
PartNTD60N03-001
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionPower MOSFET 60 Amps, 28 Volts, Package: Dpak, Pins=3
CompanyON Semiconductor
DatasheetDownload NTD60N03-001 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Power Supplies Converters Power Motor Controls Bridge Circuits

Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous = 25C Drain Current - Single Pulse (tp = 10 ms) Total Power Dissipation = 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting = 25C (VDD = 28 Vdc, VGS = 10 Vdc, = 17 Apk, = 5.0 mH, 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg EAS Value 150 733 Unit Vdc Adc Watts C mJ CASE 369A DPAK (Bend Lead) STYLE

4 Drain YWW 4228 1 Gate 2 Drain 4228 3 Source 1 Gate 4 Drain YWW T 4228

1. When surface mounted an FR4 board using 1 pad size, (Cu Area in2). 2. When surface mounted an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). *Chip current capability limited by package.

= Year = Work Week = MOSFET = Device Code

Device NTD60N03T4 NTD60N03-1 Package DPAK Straight Lead Shipping 75 Units/Rail 2500 Tape & Reel 75 Units/Rail

Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 28 Vdc) (VGS = 0 Vdc, VDS = 28 Vdc, = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, = 30 Adc) (VGS = 4.5 Vdc, = 30 Adc) (VGS = 10 Vdc, = 10 Adc) Forward Transconductance (VDS = 15 Vdc, = 10 Adc) (Note 3) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Gate Ga eC Charge a ge (VDS = 24 Vdc, = 15 Adc, Ad VGS Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 2.3 Adc, VGS = 0 Vdc) (Note 3) (IS = 30 Adc, VGS = 0 Vdc) (IS = 2.3 Adc, VGS = 0 Vdc, = 150C) Reverse e se Recovery eco e y Time e (IS Adc, Ad VGS = 0 Vdc, Vd dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. VSD trr ta tb Qrr ns s Vdc (VDD = 15 Vdc, = 15 Adc, VGS = 10 Vdc, Vdc 3.3 W) td(on) tr td(off) nC ns (VDS = 24 Vdc, Vd VGS = 0 Vdc, 1.0 0 MHz) Ciss Coss Crss 260 pF VGS(th) 1.0 RDS(on) gFS Mhos -3.8 3.0 Vdc mV/C mW V(BR)DSS 28 IDSS IGSS 10 100 nAdc 30.6 25 Vdc mV/C mAdc Symbol Min Typ Max Unit

50 ID, DRAIN CURRENT (AMPS) 4V 60 VDS 10 V ID, DRAIN CURRENT (AMPS) = -55C VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-T O-SOURCE VOLTAGE (V) = 25C

Figure 3. On-Resistance versus Gate-T o-Source Voltage
Figure 4. On-Resistance versus Drain Current and Gate Voltage
Figure 6. Drain-To-Source Leakage Current versus Voltage

 

Related products with the same datasheet
NTD60N03T4
Some Part number from the same manufacture ON Semiconductor
NTD60N03T4 Power MOSFET 60 Amps, 28 Volts, Package: Dpak, Pins=3
NTD6N40 Tmos 7 E-FET(tm) Power Field Effect Transistor: N-channel Enhancement-mode Silicon Gate: 400v, 6a
NTD70N03R HD3ERP, NFET, 75A, D2PAK, Package: D2PAK, Pins=3
NTD80N02 Power MOSFET 80 Amps, 24 Volts, Package: Dpak, Pins=3
NTD85N02R Tmos HD3E RP 24V Dpak, Package: Dpak Single Gauge Surface Mount, Pins=4
NTES1N02
NTES1P02
NTF2955 Power MOSFET -60 V, 2.4 A, Single P-channel SOT-223
NTF2N08
NTF3055-100
NTF3055-100 Power MOSFET 3.0 Amps, 60 Volts N-channel SOT-223
NTF3055-100T1 Power MOSFET 3 Amps, 60 Volts N Channel SOT-223, Package: SOT-223 (TO-261), Pins=4
NTF3055-100T1G Power MOSFET 3.0 Amps, 60 Volts N-channel SOT-223
NTF3055-100T3 Power MOSFET 3 Amps, 60 Volts N Channel SOT-223, Package: SOT-223 (TO-261), Pins=4
NTF3055-100T3G Power MOSFET 3.0 Amps, 60 Volts N-channel SOT-223
NTF3055-100T3LF Power MOSFET 3 Amps, 60 Volts N Channel SOT-223, Package: SOT-223 (TO-261), Pins=4
NTF3055-160
NTF3055-160 Power MOSFET 2.0 Amps, 60 Volts N-channel SOT-223
NTF3055-160T1 Power MOSFET 2 Amps, 60 Volts, Package: SOT-223 (TO-261), Pins=4
NTF3055-160T3 Power MOSFET 2.0 Amps, 60 Volts N-channel SOT-223
NTF3055-160T3 Power MOSFET 2 Amps, 60 Volts, Package: SOT-223 (TO-261), Pins=4

2N6274 : High-power NPN Silicon Transistors

MC74LVX4066DTR2 : Analog Switches Quad Analog Switch/Multiplexer/Demultiplexer, Package: Tssop, Pins=14

MPS6560 : Small Signal Audio Npn, Package: TO-92 (TO-226), Pins=3

MUN5115DW1 : Dual Bias Resistor Transistor

NTD6414AN-1G : Power MOSFET 100V 29A 37.6 Mohm Single N-Channel Power MOSFET 100V 29A 37.6 mohm Single N-Channel

MC10H209FNG : Dual 4−5−input Or/nor Gate

MC78M12CDTG : 500 mA Positive Voltage Regulators

NBSG53ABAEVB : 2.5v/3.3v SiGe Selectable Differential Clock and Data D Flip−flop/clock Divider with Reset and OLS

NCP1236BD100R2G : Pmic - Ac Dc Converters, Offline Switcher Integrated Circuit (ics) Tape & Reel (TR) 10.5 V ~ 28 V; IC CTLR CURR MODE 100KHZ 7-SOIC Specifications: Packaging: Tape & Reel (TR) ; Package / Case: 8-SOIC (0.154", 3.90mm Width) 7 leads ; Power (Watts): - ; Voltage - Input: 10.5 V ~ 28 V ; Voltage - Output: 28V ; Frequency Range: 92kHz ~ 108kHz ; Operating Temperature: -40C ~ 125C ; Output Isolation: Isolated ; Lead Free Status

ADT7463ARQZ-R7 : Pmic - Thermal Management Integrated Circuit (ics) SMBus Tape & Reel (TR) 3 V ~ 5.5 V; IC CTLR REMOTE THERMAL 24-QSOP Specifications: Sensing Temperature: -40C ~ 120C, External Sensor ; Output Type: SMBus ; Voltage - Supply: 3 V ~ 5.5 V ; Package / Case: 24-SSOP (0.154", 3.90mm Width) ; Packaging: Tape & Reel (TR) ; Function: Fan Control, Temp Monitor ; Lead Free Status: Lead Free ; RoHS Status: RoHS Complia

CAT28F010H90 : Memory Integrated Circuit (ics) FLASH Tube 4.5 V ~ 5.5 V; IC FLASH MEM 1MBIT 90NS 32TSOP Specifications: Memory Type: FLASH ; Memory Size: 1M (128K x 8) ; Speed: 90ns ; Interface: Parallel (Byte-wide) ; Package / Case: 32-TFSOP (0.724", 18.40mm Width) ; Packaging: Tube ; Voltage - Supply: 4.5 V ~ 5.5 V ; Operating Temperature: 0C ~ 70C ; Format - Memory: FLASH ; Lead Free Status: Lead

 
0-C     D-L     M-R     S-Z