Details, datasheet, quote on part number: NTD20N03L27T4
PartNTD20N03L27T4
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs
DescriptionPower MOSFET 20 Amps, 30 Volts, Package: Dpak, Pins=3
CompanyON Semiconductor
DatasheetDownload NTD20N03L27T4 datasheet
Cross ref.Similar parts: IPD30N03S2L-20, STD30NF03LT4, MTD20N03HDL, MTD20N03HDLT4, NTD20N03L27, NTD20N03L27-1, NTD30N02, NTD30N02T4, NTD40N03R, NTD40N03RT4
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Features, Applications

This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain­to­source diode has a ideal fast but soft recovery.

Ultra­Low RDS(on), single base, advanced technology SPICE parameters available Diode is characterized for use in bridge circuits IDSS and VDS(on) specified at elevated temperatures High Avalanche Energy Specified ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0 Power Supplies Inductive Loads PWM Motor Controls Replaces MTD20N03L in many applications

Typical Applications

Rating Drain­to­Source Voltage Drain­to­Gate Voltage (RGS 1.0 M) Gate­to­Source Voltage ­ Continuous ­ Non­Repetitive (tpv10 ms) Drain Current ­ Continuous 25_C ­ Continuous 100_C ­ Single Pulse (tpv10 µs) Total Power Dissipation = 25_C Derate above 25°C Total Power Dissipation = 25°C (Note 1.) Operating and Storage Temperature Range Single Pulse Drain­to­Source Avalanche Energy ­ Starting = 25°C (VDD = 30 Vdc, VGS = 5 Vdc, = 1.0 mH, IL(pk) 24 A, VDS = 34 Vdc) Thermal Resistance ­ Junction­to­Case ­ Junction­to­Ambient ­ Junction­to­Ambient (Note 1.) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS ID IDM PD Value 150 288 Adc Apk Watts W/°C mJ 1 Gate 2 Drain Unit Vdc WW 4 CASE 369A DPAK STYLE 2 = Device Code = Year = Work Week

Device NTD20N03L27­1 NTD20N03L27T4 Package DPAK Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel

1. When surface mounted an FR4 board using the minimum recommended pad size and repetitive rating; pulse width limited by maximum junction temperature.

Characteristic OFF CHARACTERISTICS Drain­to­Source Breakdown Voltage (Note 2.) (VGS = 0 Vdc, = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ =150°C) Gate­Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (Note 2.) (VDS = VGS, = 250 µAdc) Threshold Temperature Coefficient (Negative) Static Drain­to­Source On­Resistance (Note 2.) (VGS = 4.0 Vdc, = 10 Adc) (VGS = 5.0 Vdc, = 10 Adc) Static Drain­to­Source On­Resistance (Note 2.) (VGS = 5.0 Vdc, = 20 Adc) (VGS = 5.0 Vdc, = 10 Adc, = 150°C) Forward Transconductance (Note 2.) (VDS = 5.0 Vdc, = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, = 15 Adc, Ad VGS = 10 Vdc) (Note 2.) SOURCE­DRAIN DIODE CHARACTERISTICS Forward On­Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 2.) (IS = 20 Adc, VGS = 0 Vdc, = 125°C) Reverse Recovery Time (IS =15 Adc, Adc VGS = 0 Vdc, Vdc dlS/dt = 100 A/µs) (Note 2.) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. trr ta tb QRR VSD µC ns Vdc (VDD = 20 Vdc, = 20 Adc, VGS Vdc, Vdc 9.1 ) (Note 2.) td(on) tr td(off) nC ns (VDS 25 Vd Vdc, VGS = 0 Vdc, = 1.0 MHz) Ciss Coss Crss pF VGS(th) 1.0 ­ RDS(on) ­ VDS(on) ­ gFS mhos Vdc mV/°C m V(BR)DSS 30 ­ IDSS ­ IGSS nAdc Vdc mV/°C µAdc Symbol Min Typ Max Unit

RDS(on), DRAIN­TO­SOURCE RESISTANCE RDS(on), DRAIN­TO­SOURCE RESISTANCE
Figure 4. On­Resistance vs. Drain Current and Gate Voltage

 

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