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Details, datasheet, quote on part number:M1MA151AT1
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Datasheet text preview:
M1MA151AT1, M1MA152AT1
Preferred Device
Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications. · Fast trr, < 3.0 ns · Low CD, < 2.0 pF · Available in 8 mm Tape and Reel Use M1MA151/2AT1 to order the 7 inch/3000 unit reel. Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C)
Rating Reverse Voltage M1MA151AT1 M1MA152AT1 Peak Reverse Voltage M1MA151AT1 M1MA152AT1 Forward Current Peak Forward Current Peak Forward Surge Current IF IFM IFSM (Note 1) VRM Symbol VR Value 40 80 40 80 100 225 500 mAdc mAdc mAdc
2 1 3
http://onsemi.com SC59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V100 mA SURFACE MOUNT
ANODE 3
Unit Vdc 2 1 CATHODE NO CONNECTION
Vdc
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature 1. t = 1 SEC Symbol PD TJ Tstg Max 200 150 55 to +150 Unit mW °C °C
SC59 SUFFIX CASE 318D
MARKING DIAGRAM
Mx M
x = A for 151 B for 152 M = Date Code
Preferred devices are recommended choices for future use and best overall value.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
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May, 2002 Rev. 6
Publication Order Number: M1MA151AT1/D
M1MA151AT1, M1MA152AT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Reverse Voltage Leakage Current M1MA151AT1 M1MA152AT1 Forward Voltage Reverse Breakdown Voltage M1MA151AT1 M1MA152AT1 Diode Capacitance Reverse Recovery Time (Figure 1) 2. trr Test Circuit CD trr (Note 2) VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR VF VR Symbol IR Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 mA Min -- -- -- 40 80 -- -- Max 0.1 0.1 1.2 -- -- 2.0 3.0 pF ns Vdc Vdc Unit mAdc
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr tp t
OUTPUT PULSE
IF trr t
A
RL
10% Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100
Figure 1. Reverse Recovery Time Equivalent Test Circuit
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M1MA151AT1, M1MA152AT1 INFORMATION FOR USING THE SC59 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.094 2.4 0.039 1.0 0.031 0.8 inches mm
SC59 POWER DISSIPATION The power dissipation of the SC59 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows.
PD = TJ(max) TA RJA
the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 338 milliwatts.
PD = 150°C 25°C 370°C/W = 338 milliwatts
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into
The 370°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 338 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, the power dissipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. · Always preheat the device. · The delta temperature between the preheat and soldering should be 100°C or less.* · When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.
· The soldering temperature and time should not exceed
260°C for more than 10 seconds. · When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. · After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. · Mechanical stress or shock should not be applied during cooling
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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