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Details, datasheet, quote on part number:M1MA142WAT1
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Datasheet text preview:
M1MA141WAT1, M1MA142WAT1
Preferred Device
Common Anode Silicon Dual Switching Diode
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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ANODE 3
· · · ·
Pb-Free Package is Available Fast trr, < 10 ns Low CD, < 15 pF Available in 8 mm Tape and Reel
1
CATHODE
2
MAXIMUM RATINGS (TA = 25°C)
Rating Reverse Voltage M1MA141WAT1 M1MA142WAT1 Peak Reverse Voltage M1MA141WAT1 M1MA142WAT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFSM (Note 1) 1) IFM IF VRM Symbol VR Value 40 80 40 80 100 150 225 340 500 750 mAdc mAdc M mAdc Vdc Unit Vdc
1 2 3
MARKING DIAGRAM
xxM
SC-70 (SOT-323) CASE 419 Style 4 xx = MN for 141 = MO for 142 = Date Code
ORDERING INFORMATION
Device M1MA141WAT1 M1MA141WAT1G M1MA142WAT1 Package SC-70 SC-70 (Pb-Free) SC-70 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature 1. t = 1 sec Symbol PD TJ Tstg Max 150 150 - 55 ~ + 150 Unit mW °C °C
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
July, 2004 - Rev. 7
Publication Order Number: M1MA141WAT1/D
M1MA141WAT1, M1MA142WAT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Reverse Voltage Leakage Current M1MA141WAT1 M1MA142WAT1 Forward Voltage Reverse Breakdown Voltage M1MA141WAT1 M1MA142WAT1 Diode Capacitance Reverse Recovery Time (Figure 1) 2. trr Test Circuit CD trr (Note 2) VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR VF VR Symbol IR Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 mA Min - - - 40 80 - - Max 0.1 0.1 1.2 - - 15 10 pF ns Vdc Vdc Unit mAdc
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2
M1MA141WAT1, M1MA142WAT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp t A RL 10% Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100 W IF
OUTPUT PULSE
trr t
Figure 1. Recovery Time Equivalent Test Circuit
100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = -40°C IR , REVERSE CURRENT (µA)
10
TA = 150°C TA = 125°C
1.0
0.1
TA = 85°C TA = 55°C
1.0
TA = 25°C
0.01 TA = 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 2. Forward Voltage
Figure 3. Reverse Current
0.68 CD, DIODE CAPACITANCE (pF)
0.64
0.6
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance
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