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Details, datasheet, quote on part number:M1MA142K
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Datasheet text preview:
M1MA141KT1, M1MA142KT1
Preferred Device
Single Silicon Switching Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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CATHODE 3
· · · ·
Pb-Free Package is Available Fast trr, < 3.0 ns Low CD, < 2.0 pF Available in 8 mm Tape and Reel Use M1MA141/2KT1 to order the 7 inch/3000 unit reel Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel
ANODE NO CONNECTION 1 2
MAXIMUM RATINGS (TA = 25°C)
Rating Reverse Voltage M1MA141KT1 M1MA142KT1 Peak Reverse Voltage M1MA141KT1 M1MA142KT1 Forward Current Current Peak Forward Current Forward Current Peak Forward Surge Current g IF IFM IFSM (Note 1) 1) VRM Symbol VR Value 40 80 40 80 100 225 500 mAdc mAdc mAdc xx M = MH for 141 = MI for 142 = Date Code Vdc Unit Vdc
1 2 3
MARKING DIAGRAM
xxM
SC-70 (SOT-323) CASE 419 STYLE 2
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device M1MA141KT1 M1MA142KT1 Package SC-70 SC-70 SC-70 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature 1. t = 1 sec Symbol PD TJ Tstg Max 150 150 - 55 ~ + 150 Unit mW °C °C
M1MA142KT1G
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
July, 2004 - Rev. 5
Publication Order Number: M1MA141KT1/D
M1MA141KT1, M1MA142KT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Reverse Voltage Leakage Current M1MA141KT1 M1MA142KT1 Forward Voltage Reverse Breakdown Voltage M1MA141KT1 M1MA142KT1 Diode Capacitance Reverse Recovery Time (Figure 1) 2. trr Test Circuit CD trr (Note 2) VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR VF VR Symbol IR Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 mA Min - - - 40 80 - - Max 0.1 0.1 1.2 - - 2.0 3.0 pF ns Vdc Vdc Unit mAdc
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2
M1MA141KT1, M1MA142KT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp t A RL 10% Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100 W IF
OUTPUT PULSE
trr t
Figure 1. Recovery Time Equivalent Test Circuit
100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = -40°C IR , REVERSE CURRENT (µA) 10
TA = 150°C TA = 125°C
1.0
0.1
TA = 85°C TA = 55°C
1.0
TA = 25°C
0.01 TA = 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 2. Forward Voltage
Figure 3. Reverse Current
0.68 CD, DIODE CAPACITANCE (pF)
0.64
0.6
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance
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