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Details, datasheet, quote on part number:M14430EJ4V0DS00
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Datasheet text preview:
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
Description
The µPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).
Features
· 262,144 words by 16 bits organization · Fast access time : 8, 10, 12 ns (MAX.) · Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) · Output Enable input for easy application · Single +5.0 V power supply
Ordering Information
Part number Package Access time ns (MAX.) Supply current mA (MAX.) At operating 220 200 190 220 200 190 At standby 10
µPD444016LE-8 µPD444016LE-10 µPD444016LE-12 µPD444016G5-8-7JF µPD444016G5-10-7JF µPD444016G5-12-7JF
44-pin plastic SOJ (10.16 mm (400))
8 10 12
44-pin plastic TSOP (II) (10.16 mm (400)) (Normal bent)
8 10 12
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. M14430EJ4V0DS00 (4th edition) Date Published January 2001 NS CP(K) Printed in Japan
The mark · shows major revised points.
©
1999
µPD444016
Pin Configuration (Marking Side)
/××× indicates active low signal.
44-pin plastic SOJ (10.16 mm (400)) [ µPD444016LE ] 44-pin plastic TSOP (II) (10.16 mm (400)) (Normal bent) [ µPD444016G5-××-7JF ]
A0 A1 A2 A3 A4 /CS I/O1 I/O2 I/O3 I/O4 VCC GND I/O5 I/O6 I/O7 I/O8 /WE A5 A6 A7 A8 A9
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A17 A16 A15 /OE /UB /LB I/O16 I/O15 I/O14 I/O13 GND VCC I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10
A0 - A17
: Address Inputs
I/O1 - I/O16 : Data Inputs / Outputs /CS /W E /OE /LB, /UB VCC GND NC : Chip Select : W rite Enable : Output Enable : Byte data select : Power supply : Ground : No connection
Remark Refer to Package Drawings for the 1-pin index mark.
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Data Sheet M14430EJ4V0DS
µPD444016
Block Diagram
Address buffer
A0 | A17
Row decoder
Memory cell array 4,194,304 bits
I/O1 - I/O8
Input data controller
Sense amplifier / Switching circuit Column decoder
Output data controller
I/O9 - I/O16 /WE /CS /LB
Address buffer /UB
/OE
VCC GND
Truth Table
/CS /OE /W E /LB /UB Mode I/O1 - I/O8 H L × L × H × L L H L × L L L H L L H × H × × H × L H L L H L × H Output disable W rite Not selected Read High impedance DOUT DOUT High impedance DIN DIN High impedance High impedance High impedance I/O I/O9 - I/O16 High impedance DOUT High impedance DOUT DIN High impedance DIN High impedance High impedance ISB ICC Supply current
Remark × : Don't care
Data Sheet M14430EJ4V0DS
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