|
Details, datasheet, quote on part number:M14081EJ5V0DS00
| |
Datasheet text preview:
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4416016
16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
Description
The µPD4416016 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416016 is packaged in a 54-pin plastic TSOP (II).
Features
· 1,048,576 words by 16 bits organization · Fast access time : 15, 17 ns (MAX.) · Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) · Output Enable input for easy application
Ordering Information
Part number Package Supply voltage V Access time ns (MAX.) 15 17 Supply current mA (MAX.) At operating 250 240 At standby 10
·
µPD4416016G5-A15-9JF µPD4416016G5-A17-9JF
54-PIN PLASTIC TSOP (II) (10.16 mm (400))
3.3 ± 0.3
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. M14081EJ5V0DS00 (5th edition) Date Published December 2000 NS CP(K) Printed in Japan
The mark · shows major revised points.
©
1999
µPD4416016
Pin Configuration (Marking Side)
/xxx indicates active low signal.
54-PIN PLASTIC TSOP (II) (10.16 mm (400)) [µPD4416016G5-xxx-9JF]
I/O 13 VCC I/O 14 I/O 15 GND I/O 16 A0 A1 A2 A3 A4 /UB /CS VCC /WE NC A5 A6 A7 A8 A9 I/O 1 VCC I/O 2 I/O 3 GND I/O 4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
I/O 12 GND I/O 11 I/O 10 VCC I/O 9 A19 A18 A17 A16 A15 NC /OE GND IC /LB A14 A13 A12 A11 A10 I/O 8 GND I/O 7 I/O 6 VCC I/O 5
A0 - A19
: Address Inputs
I/O1 - I/O16 : Data Inputs / Outputs /CS /W E /OE /LB, /UB VCC GND NC IC : Chip Select : W rite Enable : Output Enable : Byte data select : Power supply : Ground : No connection : Internal connection
Note
Note
Leave this pin connect to GND.
Remark Refer to Package Drawing for 1-pin index mark.
2
Data Sheet M14081EJ5V0DS
µPD4416016
Block Diagram
VCC GND A0 A19
Address buffer
Row decoder
Memory cell array 16,777,216 bits
I/O1 - I/O8 I/O9 - I/O16 Input data controller
Sense amplifier / Switching circuit Column decoder
Output data controller
Address buffer
/WE /CS /LB
/UB
/OE
Truth Table
/CS /OE /W E /LB /UB Mode I/O 1 - I/O 8 H L × L × H × L L H L × L L L H L L H × H × × H × L H L L H L × H Output disable W rite Not selected Read High impedance DOUT DOUT High impedance DIN DIN High impedance High impedance High impedance I/O I/O 9 - I/O16 High impedance DOUT High impedance DOUT DIN High impedance DIN High impedance High impedance ISB ICC Supply current
Remark × : Don't care
Data Sheet M14081EJ5V0DS
3
|
|
