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Details, datasheet, quote on part number:TPV8200B
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Datasheet text preview:
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by TPV8200B/D
NPN Silicon RF Power Transistor
The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matching networks, the TPV8200B features high impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a single fixed tuned circuit. · To be used class AB for TV band IV and V. · Specified 28 Volts, 860 MHz Characteristics Output Power = 190 Watts (peak sync.) Output Power = 150 Watts (CW) Gain = 8 dB Min · Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
TPV8200B
Motorola Preferred Device
190 W, 470 860 MHz RF POWER TRANSISTOR NPN SILICON
CASE 375A01, STYLE 1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage CollectorCurrent -- Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Quiescent Current (without RF drive) Storage Temperature Range Symbol VCEO VCBO VEBO IC PD ICQ Tstg Characteristic Thermal Resistance, Junction to Case (1) Symbol RJC Symbol Min Typ Value 30 65 4 20 250 1.43 2 x 500 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C mAdc °C
THERMAL CHARACTERISTICS
Max 0.7 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 20 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 20 mAdc, IE = 0) EmitterBase Breakdown Voltage (IE = 20 mAdc, IC = 0) CollectorEmitter Leakage Current (VCE = 28 Vdc, RBE = 75 ) NOTE: 1. Thermal resistance is determined under specific RF condition. Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO V(BR)CBO V(BR)EBO ICER
30 65 4 --
35 80 5 --
-- -- -- 15
Vdc Vdc Vdc mAdc (continued)
REV 6
©MOTOROLA RF DEVICE DATA Motorola, Inc. 1994
TPV8200B 1
ELECTRICAL CHARACTERISTICS -- continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (ICE = 2 Adc, VCE = 10 Vdc) hFE 30 75 120 --
DYNAMIC CHARACTERISTICS
Output Capacitance (each side) (2) (VCB = 28 Vdc, IE = 0, f = 1 MHz) Cob -- 76 -- pF
FUNCTIONAL TESTS IN CW
CommonEmitter Amplifier Power Gain (VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz) Collector Efficiency (VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz) Output Power @ 1 dB Compression (Pref = 40 W) (VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz) Input overdrive: no degradation (VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz) Output Mismatch Stress: (VCE = 28 Vdc, Pout = 120 W, ICQ = 2 x 75 mA, f = 860 MHz, Load VSWR = 3:1, all phase angles at frequency of test) Gpe Pout Pin 8 45 150 30 9.5 53 165 -- -- -- -- -- dB % W W
No Degradation in Output Power Before or After Test
FUNCTIONAL TESTS IN VIDEO (Standard Black Level)
Peak Output Power @ 1 dB Compression (VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz) Pout 190 210 -- W
NOTE: 2. Value of "Cob" is that of die only. It is not measurable in TPV8200B because of internal matching network. VCC
T1
R4 C8 R3 C10 C6 D.U.T. R2 T2 P1
R5 C11 C9 C7 C3
C5 INPUT C1 R2 C6 R1 C3 C7 L1 C2 C4 L2 OUTPUT
C1 -- Chip Capacitor 47 pF ATC 100A C2 -- Chip Capacitor 12 pF ATC 100B C2 -- + Trimmer Capacitor 0.5 4 pF C3 -- Chip Capacitor 8.2 pF ATC 100B C4 -- Chip Capacitor 12 pF ATC 100B C5 -- Chip Capacitor 100 pF ATC 100A C6 -- Chip Capacitor 2 x 1000 pF Vitramon C7 -- Chip Capacitor 2 x 0.1 µF Vitramon
C8 -- Capacitor 220 µF/16 V C9 -- Capacitor 100 µF/40 V C10 -- Chip Capacitor 100 pF Vitramon C11 -- Chip Capacitor 15 nF Vitramon L1 -- Coaxial 25 / length = 41 mm L2 -- Coaxial 25 / length = 41 mm R1 -- Chip Resistor 47 R2 -- 2 x 1 (0.5 )
R3 -- Resistor 0.8 R4 -- Resistor 47 R5 -- Resistor 1.2 k P1 -- Trimmer Resistor 5 k T1 -- Transistor BD 135 T2 -- Transistor BD 135 PC Board: 1/50 Glass Teflon® r = 2.55
Figure 1. 860 MHz Test Circuit
TPV8200B 2
MOTOROLA RF DEVICE DATA
Figure 2. Components View
CAUTION The TPV8200B is a high power transistor and thermal adaptation is very important for good RF performance (see mechanical drawing for mounting recommendations). Maximum Ratings are given to avoid destruction of the transistor; another limitation is MMMTBF and the user must first determine the minimum wanted lifetime in order to choose the right way of use for the device (see MMMTBF curves), especially in case of CW application.
MOTOROLA RF DEVICE DATA
TPV8200B 3
OUTPUT
INPUT
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