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Details, datasheet, quote on part number:TPV8100B
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| Part: | TPV8100B |
| Category: | RF & Microwaves => Transistors => Power Transistors => Power Bipolar Transistors |
| Description: | TPV8100B 470-860 Mhz, 150 W, 28 V RF Power Transistor - Archived |
| Company: | Motorola Semiconductor Products |
| Datasheet: | Download TPV8100B datasheet File size : 110 kB |
| Request For quote: | Find where to buy TPV8100B
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TPV8100B/D
The RF Line
NPN Silicon RF Power Transistor
The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. I n c l u d i n g double input and output matching networks, the TPV8100B features high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit. · To be used class AB for TV band IV and V. · Specified 28 Volts, 860 MHz Characteristics Output Power = 125 Watts (peak sync.) Output Power = 100 Watts (CW) Minimum Gain = 8.5 dB · Specified 32 Volts, 860 MHz Characteristics Output Power = 150 Watts (peak sync.) · Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
TPV8100B
150 W, 470860 MHz NPN SILICON RF POWER TRANSISTOR
ARCHIVE INFORMATION
CASE 39803, STYLE 1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage CollectorCurrent -- Continuous Total Device Dissipation @ 25°C Case Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCER VCBO VEBO IC PD TJ Tstg Value 40 65 4 12 215 1.25 200 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (1) Symbol R J C Max 0.8 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mA, Rbe = 75 ) CollectorEmitter Breakdown Voltage (IC = 10 mAdc) CollectorBase Breakdown Voltage (IE = 20 mAdc) CollectorEmitter Leakage (VCE = 28 V, Rbe = 75 ) V(BR)CER V(BR)EBO V(BR)CBO ICER 30 4 65 -- -- -- -- -- -- -- -- 10 Vdc Vdc Vdc mA (continued)
NOTE: 1. Thermal resistance is determined under specified RF operating condition.
REV 6
MOTO Inc. 1994 Motorola,ROLA RF DEVICE DATA
TPV8100B 1
ARCHIVE INFORMATION
ELECTRICAL CHARACTERISTICS -- continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 2 Adc, VCE = 10 Vdc) hFE 30 -- 120 --
DYNAMIC CHARACTERISTICS
Output Capacitance (each side) (2) (VCB = 28 V, IE = 0, f = 1 MHz) Co b -- 44 -- pF
FUNCTIONAL TESTS IN CW (SOUND)
CommonEmitter Amplifier Power Gain (VCC = 28 V, Pout = 100 W, ICQ = 2 x 50 mA, f = 860 MHz) Collector Efficiency (VCC = 28 V, Pout = 100 W, IQ = 2 x 50 mA, f = 860 MHz) Gp Pout 8.5 55 100 9.5 58 110 -- -- -- dB % W
ARCHIVE INFORMATION
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
Peak Output Power (synch.) (VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz) Peak Output Power (synch.) (VCC = 32 V, ICQ = 2 x 25 mA, f = 860 MHz) Recommended Quiescent Current Pout Pout ICQ 125 150 -- 135 160 -- -- -- 2 x 0.3 W W A
NOTE: 2. Value of "Cob" is that of die only. It is not measurable in TPV8100B because of internal matching network.
Z in
f = 470 MHz f = 860 MHz 665 860
470
f (MHz) 470 665 860
Zin (Ohms) 1.95 + j3.67 3.65 + j6.82 6.66 + j13.8
ZOL* (Ohms) 10.0 + j9.50 9.23 + j1.30 4.45 + j5.22
ZOL* 0.0
665
Zo = 10
8
ZOL* = Conjugate of optimum load impedance into which ZOL* = the device operates at a given output power, ZOL* = voltage, current and frequency. NOTE: Zin & ZOL* are given from basetobase and NOTE: collectortocollector respectively.
Input and Output impedances with circuit tuned for maximum linearity @ VCC = 28 V / ICQ = 2 x 50 mA / Pout = 100 W
Figure 1. Series Equivalent Input/Output Impedances
TPV8100B 2
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
Output Power @ 1 dB Compression (Pref = 25 W) (VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz)
IN 50
C4
OUT 50 L1 R1 L2 C5 C12 C6 C7 L4 L3 C8 VC C9 C10
+
VB
R2 C1 C2
+
D.U.T. C3 C1, C9 -- Chip Capacitor 15 nF C2, C10 -- Chip Capacitor 100 nF C3, C11 -- Chip Capacitor 100 µF/40 V C4 -- Chip Capacitor 15 pF ATC 100A C5 -- Chip Capacitor 5.6 pF ATC 100A C6 -- Trimmer Capacitor 14 pF C7 -- Chip Capacitor 12 pF ATC 100B C8 -- Chip Capacitor 15 pF ATC 100A C12 -- Chip Capacitor 12 pF ATC 100A L1, L3 -- Coaxial Wire 25 /85 Mils/40 mm L2, L4 -- Printed Board Inductance R1, R2 -- Chip Resistor 1 0805 5%
C11
ARCHIVE INFORMATION
Figure 2. Test Circuit
TYPICAL CHARACTERISTICS
CW -- WIDEBAND
10 G P, POWER GAIN (dB) , EFFICIENCY (%)
60
9
50
8
Pout = 100 W VCE = 28 V ICQ = 2 x 50 mA 450 f, FREQUENCY (MHz) 900
40
Pout = 100 W VCE = 28 V ICQ = 2 x 50 mA 450 f, FREQUENCY (MHz) 900
Figure 3. Power Gain versus Frequency
Figure 4. Collector Efficiency versus Frequency
MOTOROLA RF DEVICE DATA
TPV8100B 3
ARCHIVE INFORMATION
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