|
Details, datasheet, quote on part number:TP3061
| |
Datasheet text preview:
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by TP3061/D
UHF Power Transistor
The TP3061 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including d o u b l e input and output matching networks, the TP3060 features high impedances and is easy to match. · Motorola Advanced Amplifier Concept Package · Oxynitride Passivation · Specified 26 Volts, 960 MHz Characteristics Output Power = 45 Watts Minimum Gain = 8.0 dB Efficiency = 50% · Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
TP3061
45 W, 960 MHz UHF POWER TRANSISTOR NPN SILICON
CASE 333A02, STYLE 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCER VCBO VEBO IC PD Tstg TJ Value 40 48 4.0 10 175 1.0 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (1) at 70°C Case Symbol RJC Symbol Min Typ Max 1.2 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 60 mA, RBE = 75 ) EmitterBase Breakdown Voltage (IC = 6.0 mAdc) CollectorBase Breakdown Voltage (IE = 60 mAdc) CollectorEmitter Leakage (VCE = 26 V, RBE = 75 ) V(BR)CER V(BR)EBO V(BR)CBO ICER 40 3.5 48 -- -- -- -- -- -- -- -- 15 Vdc Vdc Vdc mA (continued)
NOTE: 1. Thermal resistance is determined under specified RF operating condition.
REV 6
©MOTOROLA RF DEVICE DATA Motorola, Inc. 1994
TP3061 1
ELECTRICAL CHARACTERISTICS -- continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 10 Vdc) hFE 15 -- 100 --
DYNAMIC CHARACTERISTICS
Output Capacitance (2) (VCB = 26 V, IE = 0, f = 1.0 MHz) Cob 45 60 -- pF
FUNCTIONAL TESTS
CommonEmitter Amplifier Power Gain (VCC = 26 V, Pout = 45 W, ICQ = 200 mA, f = 960 MHz) Collector Efficiency (VCC = 26 V, Pout = 45 W, f = 960 MHz) Load Mismatch (VCC = 26 V, Pout = 45 W, ICQ = 200 mA, Load VSWR = 5:1, at all phase angles) Overdrive (VCC = 26 V, Pin = 15 W, f = 960 MHz) Gp 8.0 50 8.8 53 -- -- dB %
No Degradation in Output Power Before and After Test No Degradation in Output Power
OD
NOTE: 2. Value of "Cob" is that of die only. It is not measurable in TP3061 because of internal matching network.
C8 T1 C6 C5 R1 C4 +
C9 T3 + VCC
+ R3
R4 C6 R2 C7 T2 L1 L2 D.U.T. R5
+
C10 C11 C12
RF INPUT 50
C2 C1
RF OUTPUT 50
C1, C4, C7, C12 -- Capacitor Chip 0805 330 pF 5% C2 -- Capacitor Chip 82 pF ATC C5, C11, C8 -- Capacitor Chip 0805 15 nF 5% C6, C9, C10 -- Capacitor Chip 0805 6.0, 8.0 µF 35 V L1, L2 -- 1.5 Turns #18 AWG Choke R1 -- Chip Resistor 47 1206 5% R2 -- Chip Resistor 270 0805 5%
R3 -- Chip Resistor 47 0805 5% R4 -- Chip Resistor 100 0805 5% R5 -- Trimmer 1.0 k T1 -- SMD Transistor MJD31C or Similar T2 -- SMD Transistor T3 -- Voltage Regulator 7805 Board Material -- 1/50, Teflon Glass, r = 2.5, Cu Clad 2 Sides, 35 µm Thick
Figure 1. 960 MHz Test Circuit TP3061 2 MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
80 70 Po, OUTPUT POWER (WATTS) 60 50 40 30 20 10 0 2 4 6 8 10 Pin, INPUT POWER (WATTS) VCC = 26 V IQ = 200 mA Po, OUTPUT POWER (WATTS) f = 935 MHz 960 MHz 80 70 60 50 40 30 20 10 14 0 880 900 920 940 960 f, FREQUENCY (MHz) VCC = 26 V IQ = 200 mA Pin = 10 W 7W
12
980
1000
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
80 70 Po, OUTPUT POWER (WATTS)
12 c , COLLECTOR EFFICIENCY (%)
Gp, POWER GAIN (dB)
60 50 40 30 20 10 0 18 20
Pin = 10 W 7W
10 Gp 8 c
70
60 50
f = 960 MHz IQ = 200 mA
6 VCC = 26 V IQ = 200 mA
40
22 24 26 28 VCC, SUPPLY VOLTAGE (VOLTS)
30
32
4 880
900
920
940 960 980 f, FREQUENCY (MHz)
1000
30
Figure 4. Power Output versus Supply Voltage
Figure 5. Typical Broadband Circuit Performance
0
1 2
5
3
ZIN f = 960 MHz 900 10
10
5 Pout = 45 W VCE = 26 V 900 f MHz 10 850 900 950 ZIN OHMS -- 2.8 + j6 3.95 + j3.55 ZOL* OHMS -- 4.1 + j5 3.7 + j5.2
f = 960 MHz ZOL*
20 30
20
20
ZOL* = Conjugate of the optimum load ZOL* = impedance. Into which the device ZOL* = operates at a given output power, ZOL* = voltage, and frequency.
Figure 6. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA TP3061 3
|
|
