|
Details, datasheet, quote on part number:PH1214-80M
| |
Datasheet text preview:
Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty
PH1214-80M
PH1214-80M
Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty
Features
· · · · · · · · NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Outline Drawing
1
Description
M/A-COM's PH1214-80M is a silicon bipolar NPN power transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-80M can produce 80 watts of output power with medium pulse length (150 µS) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. Dissued emitter ballast resistors and gold metalization assure ruggedness and long-term reliability. In addition to L-band pulsed radars, this high performance power transistor can also be used in pulsed digital communications systems.
Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005" (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
F (GHz) 1.20 1.30 1.40
TEST FIXTURE INPUT CIRCUIT
Z IF () 9.4 - j4.5 8.3 - j2.8 7.9 - j1.3
Z OF () 7.0 - j2.8 4.5 - j3.2 3.0 - j2.1
TEST FIXTURE OUTPUT CIRCUIT
Absolute Maximum Rating at 25°C
Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT Tstg Tj Rating 70 3.0 6.4 185 -65 to +200 200 Units V V A W °C °C
50
ZIF
ZOF
50
Electrical Specifications at 25°C
Symbol BVCES ICES RTH(JC) PO GP RL VSWR-T VSWR-S Parameter Collector-Emitter Breakdown Collector-Emitter Breakdown Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Test Conditions IC = 35 mA VCE = 40 V VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 13 W, f = 1.2, 1.3, 1.4 GHz M in 70 80 7. 5 50 9 Max 3.5 0.80 3:1 1.5:1 Units V mA ° C /W W dB % dB V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www .macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty
PH1214-80M
Test Fixture Electrical Schematic
Top View
1
Electrical Schematic Parts List
C1, C2 C3 Q1 Board Type 100 pF ATC size A 50 uF 50 Volts PH1214-80M Rogers 6010.5 .025" Thick, ER = 10.5
Note: 1. Dimensions are in mils.
V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www .macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
|
|
