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Details, datasheet, quote on part number:PH1214-6M
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Datasheet text preview:
an AMP company
Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic`NletalKeramic Package
Absolute Maximum Ratings at 25°C
UNLESS
C-iTRW:SE
`ICTED.
T3LE?ANCES
A?E
(xI,
--
IN'HES =.O"`j' I IMETERS ; 13yy'
I
Electrical Characteristics
Parameter
at 25°C
Symbol Min Max Units Test Conditions
Collector-Emitter Breakdown Voltage Collector-Emitterleakage Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stablility Current
BV,,, ICES RW(X) PO"T GP
`lC
65
1.5 5.8
V mA "C/w w dB
%
lc=l 2 mA v,,=40 v V,,=28 V, P&.2 V,,=28 V, P,,=1.2 W, F=1.20,1.30,1.40 GHz
6.0
7.0 45
-
W, F=1.20, 1.30, 1.40GHz GHz GHz GHz GHz GHz
V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40
Vcc=28
V, P,,=l.2 W, F=l.20,1.30,1.40
RL VSWR-T VSWR-S
6 -
3:l 1S:l
dB -
V,,=28 V, P&.2
W, F=l.20,1.30,1.40
V,,=28 V, P,,=l.2 W, F=l.20,1.30,1.40 V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40
Broadband
F(GHz)
Test Fixture Impedances
z,,m z&-4
1.20 1.30
TBD TBD
TBD TBD
Specifications
Subject to Change Without Notice.
9-l 20
North America: Tel. (800) 366-2266 Fax (800) 618-8883
n
M/A-COM,
Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451
n
inc.
Europe:
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
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