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Details, datasheet, quote on part number:PH1113-100
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Datasheet text preview:
Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty
PH1113-100
PH1113-100
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty
Features
· · · · · · · · NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Outline Drawing
1
Description
M/A-COM's PH1113-100 is a silicon bipolar NPN power transistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars. Designed for common-base, class C, broadband pulsed power applications, the PH1113-100 can produce 25 watts of output power with short pulse length (3µS) at 30 percent duty cycle. The transistor is housed in a 2-lead rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.
Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005" (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
F (GHz) Z IF () 5.8 - j3.4 5.6 - j1.8 5.9 - j0.4 Z OF () 3.0 - j1.7 3.0 - j1.5 2.8 - j1.3 1.1 1.2 1.3
Absolute Maximum Rating at 25°C
Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT Tstg Tj Rating 70 3.0 9.0 350 -65 to +200 200 Units V V A W °C °C
TEST FIXTURE INPUT CIRCUIT
TEST FIXTURE OUTPUT CIRCUIT
50
ZIF
ZOF
50
Electrical Specifications at 25°C
Symbol BVCES ICES RTH(JC) PIN GP RL VSWR-T Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Test Conditions IC = 5 mA VCE = 32 V VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz M in 70 8.0 52 9 Max 10.0 0.5 16 3:1 Units V mA ° C/W W dB % dB V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www .macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty
PH1113-100
Test Fixture Electrical Schematic
Top View
Circuit Dimensions
V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www .macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
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