|Description||High Performance Interfacing and Switching|
|Company||Lattice Semiconductor Corp.|
|Datasheet||Download LX64ECCF1003 datasheet
High-performance sysHSI (standard part number) Low-cost, no sysHSI ("E-Series")
High bandwidth to 12.8 Gbps (SERDES) to 38 Gbps (without SERDES) 16 (15x10) FIFOs for data buffering High speed performance fMAX 360MHz tPD 3.0ns tCO = 2.0ns Built-in programmable control logic capability I/O intensive: to 256 I/Os Expanded MUX capability to 188:1 MUX
Serializer/de-serializer (SERDES) included Clock Data Recovery (CDR) built in 800 Mbps per channel LVDS differential support 10B/12B support Encoding / decoding Bit alignment Symbol alignment 8B/10B support Bit alignment Symbol alignment Source Synchronous support
Frequency synthesis and skew management Clock multiply and divide capability Clock shifting in 335ps steps Up to four PLLs
IEEE 1532 compliant In-System Programmability (ISPTM) Boundary scan test through IEEE 1149.1 interface or 1.8V power supplies 5V tolerant I/O for LVCMOS 3.3 and LVTTL interfaces
LVCMOS 2.5, 3.3 and LVTTL support for standard board interfaces SSTL 2/3 Class I and II support HSTL Class I, III and IV support GTL+, PCI-X for bus interfaces LVPECL, LVDS and Bus LVDS differential support Hot socketing Programmable drive strength Table 1. ispGDX2 Family Selection GuideispGDX2-64/E I/Os GDX Blocks tPD tS tCO fMAX (Toggle) Max Bandwidth sysHSI Channels PLLs Package
1. Max number of SERDES channels per device 800Mbps 2. "E-Series" does not support sysHSI. 3. fMAX (Toggle) * maximum I/Os divided by 2.
© 2005 Lattice Semiconductor Corp. All Lattice trademarks, registered trademarks, patents, and disclaimers are as listed at www.latticesemi.com/legal. All other brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice.sysIO Bank SERDES FIFO GDX Block SERDES FIFO
The ispGDX2TM family is Lattice's second generation in-system programmable generic digital crosspoint switch for high speed bus switching and interface applications. The ispGDX2 family is available in two options. The standard device supports sysHSI capability for ultra fast serial communications while the lower-cost "E-series" supports the same high-performance FPGA fabric without the sysHSI Block. This family of switches combines a flexible switching architecture with advanced sysIO interfaces including high performance sysHSI Blocks, and sysCLOCK PLLs to meet the needs of the today's high-speed systems. Through a muliplexer-intensive architecture, the ispGDX2 facilitates a variety of common switching functions. The availability of on-chip control logic further enhances the power of these devices. A high-performance solution, the family supports bandwidth to 38Gbps. Every device in the family has a number of PLLs to provide the system designer with the ability to generate multiple clocks and manage clock skews in their systems.
The sysIO interfaces provide system-level performance and integration. These I/Os support various modes of LVCMOS/LVTTL and support popular high-speed standard interfaces such as GTL+, PCI-X, HSTL, SSTL, LVDS and Bus-LVDS. The sysHSI Blocks further extend this capability by providing high speed serial data transfer capability. Devices in the family can operate or 1.8V core voltages and can be programmed in-system via an IEEE 1149.1 interface that is compliant with the IEEE 1532 standard. Voltages required for the I/O buffers are independent of the core voltage supply. This further enhances the flexibility of this family in system designs. Typical applications for the ispGDX2 include multi-port multi-processor interfaces, wide data and address bus multiplexing, programmable control signal routing and programmable bus interfaces. Table 1 shows the members of the ispGDX2 family and their key features.
The ispGDX2 devices consist of GDX Blocks interconnected by a Global Routing Pool (GRP). Signals interface with the external system via sysIO banks. In addition, each GDX Block is associated with a FIFO and a sysHSI Block to facilitate the transfer of data on- and off-chip. Figure 1 shows the ispGDX2 block diagram. Each GDX Block can be individually configured in one of four modes: Basic (No FIFO or SERDES) FIFO Only SERDES Only SERDES and FIFO Each sysIO bank has its own I/O power supply and reference voltage. Designers can use any output standard within a bank that is compatible with the power supply. Any input standard may be used, providing it is compatible with the reference voltage. The banks are independent.
The ispGDX2 architecture is organized into GDX Blocks, which are connected via a Global Routing Pool. The innovative GRP is optimized for routability, flexibility and speed. All the signals enter via the GDX Block. The block supplies these either directly or in registered form to the GRP. The GRP routes the signals to different blocks, and provides separate data and control routing. The data path is optimized to achieve faster speed and routing flexibility for nibble oriented signals. The control routing is optimized to provide high-speed bit oriented routing of control signals. There are some restrictions on the allocation of pins for optimal bus routing. These restrictions are considered by the software in the allocation of pins.
The blocks are organized in a "block" (nibble) manner, with each GDX Block providing data flow and control logic for 16 I/O buffers. The data flow is organized as four nibbles, each nibble containing four Multiplexer Register Blocks (MRBs). Data for the MRBs is provided from 64 lines from the GRP. Figure 2 illustrates the groups of signals going into and out of a GDX Block. Control signals for the MRBs are provided from the Control Array. The Control Array receives the 32 signals from the GRP and generates 16 control signals: eight MUX Select, four Clock/Clock Enable, two Set/Reset and two Output Enable. Each nibble is controlled via two MUX select signals. The remaining control signals go to all the MRBs. Besides the control signals from the Control Array, the following global signals are available to the MRBs in each GDX Block: four Clock/Clock Enable, one reset/preset, one power-on reset, two of four MUX select (two of two in 64 I/O), four Output Enable (two in 64 I/O) and Test Out Enable (TOE).
|Related products with the same datasheet|
|Some Part number from the same manufacture Lattice Semiconductor Corp.|
|LX64ECCF10032 High Performance Interfacing and Switching|
|PAC80 In-system Programmable Analog Circuit|
|ISP1032E High-density Programmable Logic|
|LA-LATTICEXP2 La-latticexp2 Family Data Sheet|
|LFXP10C-3F256I Latticexp Family Data Sheet|
|GAL16V8-25LNC High Performance E2cmos PLD Generic Array Logic¢â|
M5-128/74-7HC : Fifth Generation MACH Architecture
M5-512/256-12AC : Fifth Generation MACH Architecture
LCMXO1200LUTSE-4FT324CES : Machxo Family Data Sheet
LCMXO640LUTSC-5MN100C : Machxo Family Data Sheet
LC4256V-10TN144I : 3.3v/2.5v/1.8v In-system Programmable Superfast High Density PLDs
ISPLSI2032A-80LT48I : EE PLD, 13 ns, PQCC44 Specifications: Package Type: Other, PLASTIC, LCC-44 ; Logic Family: CMOS ; Pins: 44 ; Internal Frequency: 77 MHz ; User I/Os: 32 pins ; Propagation Delay: 13 ns ; Operating Temperature: 0 to 70 C (32 to 158 F) ; Supply Voltage: 5V
M5-128/68-7VNC : EE PLD, 10 ns, PQFP144 Specifications: Package Type: QFP, Other, PLASTIC, QFP-144 ; Logic Family: CMOS ; Pins: 144 ; Internal Frequency: 83.3 MHz ; User I/Os: 104 pins ; Propagation Delay: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F) ; Supply Voltage: 5V
2SC5539 : . Low noise : NF=1.1dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cutoff frequency : fT=7.5GHz typ. Ultrasmall, slim flat-lead package. × 0.6mm) s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO PC Tj Tstg.
PZTA27 : PZTA27 - NPN Darlington Transistor. This device is designed for applications requiring extremely high current gain at collector currents to 500mA. Sourced from process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCES VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current.
T6410D : Triacs.
A2714B-4SURW-S530-A3 : 3.0mm Round Type LED Lamps. Low power consumption High efficiency and low cost Good control and free combinations on the colors of LED lamps Good lock and easy to assembly Stackable and easy to assembly Stackable vertically and easy to assembly Versatile mounting on P.C board or panel Stackable horizontally and easy to assembly Pb free The product itself will remain within RoHS.
SA24AG : 500 Watt Peak Power Minimosorb Zener Transient Voltage Suppressors. SA5.0A Series 500 Watt Peak Power MiniMOSORBt Zener Transient Voltage Suppressors The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in ON Semiconductor's.
SRL5060P : LOW Forward Voltage Schottky Barrier Rectifier. Schottky Barrier Chip Guard Ring Die Construction for Transient Protechion Low Power Loss, High efficiency High Surge Capability High Current capacity and Low Forward Voltage Drop For use in low voltage high frequency inverters, Free wheeling, and polarity protection applications Plastic Material has UL Flammability Classification 94V-0 Case: TO-3P(TO-247AD).
STBS082 : Surface Mount Bidirectional Transient Voltage Suppressor. * 500W surge capability 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface.
HZ15L : Silicon Epitaxial Planar Zener Diode for Low Noise Application. Silicon Epitaxial Planar Zener Diode for Low Noise Application Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 5.2V through V of zener voltage provide flexible application.
TBT8056 : Pigtailed PD for Analog Application. Long wavelength InGaAs PIN-PD Detection wavelength range to 1.6µm SMF or MMF Pigtailed SC, FC, ST, or LC Connector InGaAs long wavelength PIN photodiode Operation & 1550nm High responsivity, low dark current and low capacitance Operating temperature to +85 Single-mode fiber or multimode fiber pigtailed with or FC connector The TxP4NN3 series is a reliable.
D105F301FO3 : 300pF Mica And Ptfe Capacitor Radial 1000V (1kV); CAP 300PF 1000V MICA RADIAL. s: Capacitance: 300pF ; Voltage - Rated: 1000V (1kV) ; Tolerance: ±1% ; : General Purpose ; Dielectric Material: Mica ; Operating Temperature: -55°C ~ 125°C ; Lead Spacing: 0.142" (3.60mm) ; Mounting Type: Through Hole ; Package / Case: Radial ; Packaging: Bulk ; Lead Free.
THF686K015P1F : 68µF Tantalum Capacitor Axial 15V; CAP TANT 68UF 15V 10% AXIAL. s: Capacitance: 68µF ; Voltage - Rated: 15V ; Tolerance: ±10% ; : Wet Tantalum ; Operating Temperature: -55°C ~ 125°C ; Lead Spacing: - ; ESR (Equivalent Series Resistance): 95.0 mOhm ; Lifetime @ Temp.: - ; Mounting Type: Through Hole ; Type: Hermetically Sealed ; Package / Case: Axial.
ERA-3AEB1401V : 1.4K Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES 1.4K OHM 1/10W .1% 0603 SMD. s: Resistance (Ohms): 1.4K ; Power (Watts): 0.1W, 1/10W ; Tolerance: ±0.1% ; Packaging: Tape & Reel (TR) ; Composition: Thin Film ; Temperature Coefficient: ±25ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.
RCL0612866KFKEA : 866K Ohm 0.5W, 1/2W Chip Resistor - Surface Mount; RES 866K OHM .5W 1% 0612 WIDE. s: Resistance (Ohms): 866K ; Power (Watts): 0.5W, 1/2W ; Tolerance: ±1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: ±100ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.
ERD-S1TJ223V : 22K Ohm 0.5W, 1/2W Through Hole Resistors; RES 22K OHM CARBON FILM 1/2W 5%. s: Resistance (Ohms): 22K ; Power (Watts): 0.5W, 1/2W ; Tolerance: ±5% ; Packaging: Cut Tape (CT) ; Composition: Carbon Film ; Temperature Coefficient: -150/ -350ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.
DDZ30D-7 : Diode - Zener - Single Discrete Semiconductor Product 50nA @ 23V 30V 500mW Surface Mount; DIODE ZENER 30V 500MW SOD-123. s: Voltage - Zener (Nom) (Vz): 30V ; Power - Max: 500mW ; Impedance (Max) (Zzt): 55 Ohm ; Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA ; Current - Reverse Leakage @ Vr: 50nA @ 23V ; Tolerance: ±2.5% ; Mounting Type: Surface Mount.
RMASUHD1936BK1 : Metal, Steel Adjustable Rack - Component Boxes, Enclosures, Rack Shelf, Fixed; SHELF FIXED 36X17.4X3.47" BLACK. s: Color: Black ; : Adjustable ; For Use With/Related Products: 19" Panel Width Racks ; Material: Metal, Steel ; Shipping Info: Shipped from Digi-Key ; Size / Dimension: 36.000" L x 17.420" W x 3.470" H (914.40mm x 442.47mm x 88.14mm) ; Type:.
SXLP-8+ : 9.2 MHz, LOW PASS FILTER. s: Filter Type: Low Pass ; Fc: 9.2 MHz ; Insertion Loss: 3 dB ; VSWR: 1.7 1 ; Package Type: Surface Mount ; Operating Temperature: -40 to 185 F (233 to 358 K).
127AFA010M : CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 10 V, 120 uF, SURFACE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 120 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 240 microamps ; ESR: 35 milliohms ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 105 C (-67 to 221 F).
4206-63 : 10 MHz - 2500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 10 dB INSERTION LOSS-MAX. s: Attenuator Type: Variable ; Frequency: 0.0100 to 2.5 GHz ; Insertion Loss: 10 dB ; VSWR: 1.6 1 ; Attenuation: 63 dB.