Details, datasheet, quote on part number: VUO80-16NO1
CategoryDiscrete => Bridges => Three Phase => Diode Bridges
TitleDiode Bridges
CompanyIXYS Corporation
DatasheetDownload VUO80-16NO1 datasheet
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Features, Applications

Test Conditions = 90C, module TVJ = 0 TVJ = TVJM ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine

Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage 1800 V Low forward voltage drop Leads suitable for PC board soldering UL registered E72873

Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors

TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. = 1 min (M5) (10-32UNF)

Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions = 0.0394")

For power-loss calculations only per diode, 120 rect. per module, 120 rect. Creeping distance on surface Creepage distance in air Max. allowable acceleration

Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions.

Fig. 1 Forward current versus voltage drop per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Max. forward current versus heatsink temperature
Fig. 6 Transient thermal impedance junction to heatsink


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