Details, datasheet, quote on part number: VUO36-16NO8
CategoryDiscrete => Bridges => Three Phase => Diode Bridges
TitleDiode Bridges
CompanyIXYS Corporation
DatasheetDownload VUO36-16NO8 datasheet
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Features, Applications

Test Conditions = 85C, module = 62C, module TVJ = 0 TVJ = TVJM ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine


Package with fast-on terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage 1800 V Low forward voltage drop UL registered E 72873


TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. = 1 min (M5) (10-32 UNF)

Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors

Easy to mount with one screw Space and weight savings Improved temperature and power cycling

For power-loss calculations only per diode; DC current per module per diode; DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration

Data according to DIN IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions.

Fig. 1 Forward current versus voltage drop per diode
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Maximum forward current at case temperature
Fig. 6 Transient thermal impedance per diode 2000 IXYS All rights reserved


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