Details, datasheet, quote on part number: VUO122-08NO7
CategoryDiscrete => Bridges => Three Phase => Diode Bridges
TitleDiode Bridges
CompanyIXYS Corporation
DatasheetDownload VUO122-08NO7 datasheet
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Features, Applications

Test Conditions = 100C, module TVJ = 0 TVJ = TVJM ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine

Features Package with DCB ceramic base plate Isolation voltage 3000 V~ Planar passivated chips Low forward voltage drop Leads suitable for PC board soldering Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors

Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Small and light weight Dimensions = 0.0394")

For power-loss calculations only per diode; DC current per module per diode, DC current (typ.) per module (typ.) Creeping distance on surface Creepage distance in air Max. allowable acceleration

Data according to IEC 60747 refer to a single diode unless otherwise stated for resistive load at bridge output.

IXYS reserves the right to change limits, test conditions and dimensions.


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