Details, datasheet, quote on part number: VUO100-12NO7
CategoryDiscrete => Diodes & Rectifiers => General Purpose Diodes
Description800V Three Phase Rectifier Bridge
CompanyIXYS Corporation
DatasheetDownload VUO100-12NO7 datasheet
Find where to buy


Features, Applications

Test Conditions = 100C, module TVJ = 0 TVJ = TVJM ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine

Features Package with copper base plate Isolation voltage 3000 V~ Planar passivated chips Low forward voltage drop fast-on power terminals

Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors

Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Small and light weight

For power-loss calculations only per diode; DC current per module per diode, DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration

Data according to IEC 60747 refer to a single diode unless otherwise stated x for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions.


Related products with the same datasheet
Some Part number from the same manufacture IXYS Corporation
VUO100-14NO7 800V Three Phase Rectifier Bridge
VUO105-12NO7 1200V Three Phase Rectifier Bridge
VUO110-08NO7 800V Three Phase Rectifier Bridge
VUO120 Three Phase Rectifier Bridge
VUO120-12NO1 1200V Three Phase Rectifier Bridge
VUO121-16NO1 1600V Yhree Phase Rectifier Bridge
VUO125-12NO7 1200V Three Phase Rectifier Bridge
VUO155 Three Phase Rectifier Bridge
VUO155-12NO7 1200V Three Phase Rectifier Bridge
VUO155-16NO1 Three Phase Rectifier Bridge
VUO155-16NO7 1200V Three Phase Rectifier Bridge
VUO16-08NO1 Three Phase Rectifier Bridge
VUO160-08NO7 800V Three Phase Rectifier Bridge
VUO18 Three Phase Rectifier Bridges With Semi Fast Diodes
VUO190-08NO7 800V Three Phase Rectifier Bridge
VUO22-08NO1 Three Phase Rectifier Bridge

IXFK24N100F : F-Class HiPerRF Capable MOSFETs 1000V Hiperrf Power MOSFET

IXGP15N120C : 1200V Igbt

PDM41258LA8SOATR : 256k Static RAM 64kx4-bit

VMO580-02T : Megamos TM Fet Module

IXGA7N60C : Mid-Frequency Range (15KHz-40KHz) Types Single IGBT DCB Isolated mounting tab 􀁺 Meets TO-247AD package Outline 􀁺 High current handling capability 􀁺 Latest generation HDMOSTM process 􀁺 MOS Gate turn-on

IXDI402SI : 2 Ampere Dual Low-side Ultrafast Mosfet Drivers

MDO1200-14N1 : Diodes, Rectifier Semiconductor Module; DIODE MODULE SGL 1400V Y1-CU Specifications: Diode Type: Standard ; Diode Configuration: Single ; Voltage - DC Reverse (Vr) (Max): 1400V (1.4kV) ; Current - Average Rectified (Io) (per Diode): - ; Voltage - Forward (Vf) (Max) @ If: - ; Current - Reverse Leakage @ Vr: - ; Reverse Recovery Time (trr): - ; Speed: Standard Recovery

PDM31564SA8T : 256K X 16 STANDARD SRAM, 10 ns, PDSO44 Specifications: Memory Category: SRAM Chip ; Density: 4194 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Package Type: SOJ, 0.400 INCH, PLASTIC, SOJ-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

0-C     D-L     M-R     S-Z