Details, datasheet, quote on part number: DSEI2x61-06P
PartDSEI2x61-06P
CategoryDiscrete => Diodes & Rectifiers => Ultra Fast Diodes
Description
CompanyIXYS Corporation
DatasheetDownload DSEI2x61-06P datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Symbol IFRMS IFAVM IFRM IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Symbol IR Conditions TVJ VR = VRRM TVJ = 0.8 VRRM TVJ = 0.8 VRRM 60 A; TVJ = 150C TVJ 25C 50/60 Hz, RMS IISOL 1 mA Mounting torque = 1 min t=1s Conditions Maximum Ratings (per diode) V~ Nm lb.in. g Features 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour TVJ = TVJM = 70C; rectangular; < 10 s; rep. rating; pulse width limited by TVJM TVJ ms (50 Hz), sine

Applications Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Low noise switching Small and light weight

Characteristic Values (per diode) typ. max. A mA K/W 50 21 min. 11.2 min. 11.2 max. A mm m/s

1 A; -di/dt = 200 A/s 30 V; TVJ 60 A; -diF/dt = 480 A/s L 0.05 H; TVJ = 100C Creeping distance on surface Creeping distance in air Allowable acceleration

IFAVM rating includes reverse blocking losses at TVJM, = 0.8 VRRM, duty cycle = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions

Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt.

Fig. 4 Dynamic parameters versus junction temperature.
Fig. 6 Peak forward voltage versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.

 

Some Part number from the same manufacture IXYS Corporation
DSEI2X61-10B
DSEI2x61-10P
DSEI2X61-12B Fast Recovery Epitaxial Diodes (fred)
DSEI2x61-12P
DSEI30 Fast Recovery Epitaxial Diode (fred)
DSEI30-06A
DSEI30-10A
DSEI30-10B
DSEI30-12A
DSEI35-06AS Fast Recovery Epitaxial Diode (fred)
DSEI6
DSEI60
DSEI60-06A
DSEI60-10A
DSEI60-12A
DSEI8
DSEK60 Common Cathode Fast Recovery Epitaxial Diode (fred)
DSEK60-12A
DSEP12-12A Hiperfred(tm) Epitaxial Diode With Soft Recovery
DSEP130-06A 600V Hiperfred Epitaxial Diode
DSEP15-03A Hiperfred (tm) Epitaxial Diode With Soft Recovery

DSEP2X91-06A : Hiperfred(tm) Epitaxial Diode With Soft Recovery

DSS10-0045B : Power 45V Power Schottky Rectifier

IXFN44N80 : HiperFET(tm) Power MOSFETs Single MOSFETs Die N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low T (rr): 800v, 44a

IXGR39N60BD1 : Low Voltage < 600 Volts Hiperfast(tm) Igbt ISOplus247(tm) (electronically ISOlated Backside)

VBO72-14NO7 :

IXFH14N100Q2 : High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances

IXGM30N60 : Low Vce(sat) Igbt, High Speed IGBT

MX868RTR : Magnetic - Hall Effect, Digital Switch, Linear, Compass (ICs) IC FLUX SENSOR 12BIT DGTL 8-DFN -; IC FLUX SENSOR 12BIT DGTL 8-DFN Specifications: Features: - ; Package / Case: 8-VFDFN ; Current - Output (Max): - ; Sensing Range: - ; Operating Temperature: -40C ~ 85C ; Output Type: Digital, 12-Bit Serial ; Type: Special Purpose ; Voltage - Supply: 4.5 V ~ 5.5 V ; Current - Supply: 3mA ; Lead Free Status: Lead Free ; RoHS Stat

IXTP140N055T2 : Fet - Single Discrete Semiconductor Product 140A 55V 250W Through Hole; MOSFET N-CH 55V 140A TO-220 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 55V ; Current - Continuous Drain (Id) @ 25 C: 140A ; Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V ; Input Capacitance (Ciss) @ Vds: 4760pF @ 25V ; Power - Max: 250W ; Packaging: Tu

IXFD50N20-7X : 200 V, 0.049 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.0490 ohms ; Package Type: 0.348 X 0.283 INCH, DIE ; Number of units in IC: 1

Same catergory

2N3771 : High Power NPN Silicon Transistor. The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. Symbol V CEO V CEV V CBO V EBO BM P tot T stg Parameter 2N3771 Collector-Emitter Voltage = 0) Collector-Emitter Voltage = -1.5V) Collector-Base Voltage = 0) Emitter-Base Voltage.

BSP319E6327 : N-channel Sipmos Small-signal Transistor. N channel Enhancement mode Logic Level Avalanche rated VGS(th) 1.22.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Maximum Ratings Parameter Symbol Values Unit Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering.

D5LC20U : Super Fast Recoveryrectifiers / Center Tap, Common Cathode (Three Terminal Type).

FPAL15SM60 : 15A, Smart Power Module (SPM). is an advanced smart power module (SPM) that Fairchild has newly developed and designed to provide very compact and low cost, yet high performance ac motor drives mainly targeting medium speed low-power inverterdriven application like air conditioners. It combines optimized circuit protection and drive matched to low-loss IGBTs. Highly effective short-circuit.

MMBZ5226B : 3.3V, 0.35W Zener Diode. Power Dissipation Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed.

MPQ7093 : Quad Transistors.

STH7NA80FI : High Voltage. Old PRODUCT: Not Suitable For Design-in. N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPICAL RDS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS.

IRLR8721PBF : 30V Single N-Channel HEXFET Power MOSFET 30V Single N-Channel HEXFET Power MOSFET.

NDD03N60Z : Power MOSFET 600V 2.6A 3.6 Ohm Single N-Channel DPAK Power MOSFET 600V 2.6A 3.6 Ohm Single N-Channel DPAK.

050021R5ACMB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000015 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.50E-6 microF ; Capacitance Tolerance: 17 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

05002-360AGMB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000036 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.60E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

FR801K : 8 A, 50 V, SILICON, RECTIFIER DIODE. s: Package: DPAK, ROHS COMPLIANT, PLASTIC, DPAK-3 ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 8000 mA ; trr: 0.1500 ns ; RoHS Compliant: RoHS.

HS12135R : 120 A, 35 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: ROHS COMPLIANT PACKAGE-1 ; Number of Diodes: 1 ; VRRM: 35 volts ; IF: 120000 mA.

IRL520AJ69Z : 9.2 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.2200 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1.

SA055A471JAA : CAP,CERAMIC,470PF,50VDC,.5PF -TOL,.5PF +TOL,5% -TOL,5% +TOL,NP0 TC CODE. s: Dielectric: Ceramic Composition.

X-CTN : RESISTOR, NETWORK, FILM, DIVIDER, 0.25 W, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Operating DC Voltage: 100 volts ; Operating Temperature: -55 to 175 C (-67 to 347 F).

184MABA05KGC : CAPACITOR, METALLIZED FILM, 1150 V, 0.18 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; RoHS Compliant: Yes ; Capacitance Range: 0.1800 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 1150 volts ; Mounting Style: Through Hole ; Operating Temperature: -25 to 85 C (-13.

31753R : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.

672D107F012CC5D : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 12 V, 100 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 50 (+/- %) ; WVDC: 12 volts ; Leakage Current: 1.04 microamps ; ESR: 1.6 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -55 to 105 C (-67.

 
0-C     D-L     M-R     S-Z