Details, datasheet, quote on part number: 30N60CD1
Part30N60CD1
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Low Voltage < 600 Volts
TitleLow Voltage < 600 Volts
DescriptionHigh Speed Igbt With Diode
CompanyIXYS Corporation
DatasheetDownload 30N60CD1 datasheet
  

 

Features, Applications

Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight

Test Conditions to 150°C; RGE 1 MW Continuous Transient 1 ms VGE 10 W Clamped inductive load, VCL = 0.8 VCES VGE 15 V, VCE 33 W, non repetitive = 25°C

Features International standard packages: JEDEC TO-264& TO-268 Short Circuit SOA capability High freqeuncy IGBT and antiparallel FRED in one package New generation HDMOSTM process Applications

Maximum lead temperature for soldering mm (0.062 in.) from case for 10 s Symbol Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. nA V

AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies

Advantages Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Surface mountable, high power case style Reduces assembly time and cost High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. mJ 0.62 K/W

gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK

= IC90, VGE 15 V, VCE = 0.5 VCES Inductive load, = IC90; VGE 15 V VCE = 0.8 VCES; 4.7 W Note 1. Inductive load, = IC90; VGE 15 V VCE = 0.8 VCES; 4.7 W Note 1

Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions = IC90, VGE 0 V Note 2
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. A ns

Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG. 2. Pulse test, £ 300 ms, duty cycle

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

 

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