Details, datasheet, quote on part number: 30N60C
Part30N60C
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Low Voltage < 600 Volts
TitleLow Voltage < 600 Volts
DescriptionHigh Speed Igbt
CompanyIXYS Corporation
DatasheetDownload 30N60C datasheet
  

 

Features, Applications

Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight

Test Conditions to 150C; RGE 1 M Continuous Transient 1 ms VGE = 2.7 Clamped inductive load, VCC= 0.8 VCES VGE 15 V, VCE 33 , non repetitive = 25C

Features

International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process

Maximum lead temperature for soldering mm (0.062 in.) from case for 10 s
Applications
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. nA V

AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies

Easy to mount with 1 screw (isolated mounting screw hole) Surface mountable, high power case style Reduce assembly time and cost High power density

Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10 3100 VCE 25 V, VGE = 1 MHz = IC90, VGE 15 V, VCE = 0.5 VCES 38 30 Inductive load, = IC90, VGE 15 V VCE = 0.8 VCES, = 4.7 Note 30N60B 30N60C Inductive load, = IC90, VGE 15 V VCE = 0.8 VCES, = 4.7 Note nC ns

gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK

Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:


 

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