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Details, datasheet, quote on part number:HM-6617/883
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Datasheet text preview:
HM-6617/883
January 2001
2K x 8 CMOS PROM
Description
The HM-6617/883 is a 16,384-bit fuse link CMOS PROM in a 2K word by 8-bit/word format with "Three-State" outputs. This PROM is available in the standard 0.600 inch wide 24 pin SBDIP, the 0.300 inch wide slim SBDIP, and the JEDEC standard 32 pad CLCC. The HM-6617/883 utilizes a synchronous design technique. This includes on-chip address latches and a separate output enable control which makes this device ideal for applications utilizing recent generation microprocessors. This design technique, combined with the Intersil advanced self-aligned silicon gate CMOS process technology offers ultra-low standby current. Low ICCSB is ideal for batter y applications or other systems with low power requirements. The Intersil NiCr fuse link technology is utilized on this and other Intersil CMOS PROMs. This gives the user a PROM with permanent, stable storage characteristics over the full industrial and military temperature voltage ranges. NiCr fuse technology combined with the low power characteristics of CMOS provides an excellent alternative to standard bipolar PROMs or NMOS EPROMs. All bits are manufactured storing a logical "0" and can be selectively programmed for a logical "1" at any bit location.
Features
· This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. · Low Power Standby and Operating Power - ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA - ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz · Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 90/120ns · Industry Standard Pinout · Single 5.0V Supply · CMOS/TTL Compatible Inputs · High Output Drive . . . . . . . . . . . . . . . . 12 LSTTL Loads · Synchronous Operation · On-Chip Address Latches · Separate Output Enable · Operating Temperature Range . . . . . . -55oC to +125oC
Ordering Information
PACKAGE SBDIP SLIM SBDIP CLCC TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC -55oC to +125oC 90ns HM1-6617B/883 HM6-6617B/883 HM4-6617B/883 120ns HM1-6617/883 HM6-6617/883 HM4-6617/883 PACKAGE NO. D24.6 D24.3 J32.A
Pinouts
HM-6617/883 (SBDIP) TOP VIEW
A7
HM-6617/883 (CLCC) TOP VIEW
VCC NC NC NC NC NC
PIN DESCRIPTION PIN
29 A8 28 A9 27 NC 26 P 25 G 24 A10 23 E 22 Q7 21 Q6
DESCRIPTION No Connect Address Inputs Chip Enable Data Output Power (+5V) Output Enable Program Enable
A7 A6 A5 A4 A3 A2 A1 A0 Q0
1 2 3 4 5 6 7 8 9
24 VCC 23 A8 22 A9 21 P 20 G 19 A10 18 E 17 Q7 16 Q6 15 Q5 14 Q4 13 Q3
4 A6 5 A5 6 A4 7 A3 8 A2 9 A1 10 A0 11 NC 12 Q0 13
3
2
1
32 31 30
NC A0-A10 E Q VCC G P (Note)
Q1 10 Q2 11 GND 12
14 15 16 17 18 19 20 Q1 Q2 Q3 Q4 GND NC Q5
NOTE: P should be hardwired to VCC except during programming.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2001
File Number
3016.2
1
HM-6617/883 Functional Diagram
MSB A10 A9 A8 A7 A6 A5 A4 A LATCHED ADDRESS REGISTER A 7 LSB L G 16 16 16 16 16 16 16 16 G E GATED COLUMN DECODER AND DATA OUTPUT CONTROL A 4 G L ALL LINES POSITIVE LOGIC: ACTIVE HIGH MSB A3 A2 A1 A0 THREE-STATE BUFFERS: A HIGH OUTPUT ACTIVE ADDRESS LATCHES AND GATED DECODERS: LATCH ON FALLING EDGE OF E GATE ON FALLING EDGE OF G LATCHED ADDRESS REGISTER LSB A 4 Q6 Q7 8 Q3 Q4 Q5 Q2 7 GATED ROW DECODER 128 x 128 MATRIX Q0 Q1
128
2
HM-6617/883
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V Typical Derating Factor . . . . . . . . . . . . 5mA/MHz Increase in ICCOP ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance JA JC SBDIP Package . . . . . . . . . . . . . . . . . . 48oC/W 9oC/W Slim SBDIP . . . . . . . . . . . . . . . . . . . . . 65oC/W 14oC/W CLCC Package . . . . . . . . . . . . . . . . . . 58oC/W 19oC/W Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +175oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.8V Input High Voltage . . . . . . . . . . . . . . . . . . . . . . +2.4V to VCC +0.3V
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5473 Gates
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
TABLE 1. HM-6617/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested LIMITS PARAMETER High Level Output Voltage Low Level Output Voltage High Impedance Output Leakage Current Input Leakage Current SYMBOL VOH1 VOL IIOZ (NOTES 1, 4) CONDITIONS VCC = 4.5V, IO = -2.0mA VCC = 4.5V, IO = +4.8mA VCC = 5.5V, G = 5.5V, VI/O = GND or VCC VCC = 5.5V, VI = GND or VCC, P Not Tested VI = VCC or GND, VCC = 5.5V, IO = 0mA VCC = 5.5V, G = GND, (Note 3), f = 1MHz, IO = 0mA, VI = VCC or GND VCC = 4.5V (Note 6) GROUP A SUBGROUPS 1, 2, 3 1, 2, 3 1, 2, 3 TEMPERATURE -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC MIN 2.4 -1.0 MAX 0.4 1.0 UNITS V V µA µA µA
II
1, 2, 3
-1.0
1.0
Standby Supply Current
ICCSB
1, 2, 3
-
100
Operating Supply Current
ICCOP
1, 2, 3
-
20
mA
Functional Test
FT
7, 8A, 8B
-55oC TA +125oC
-
-
TABLE 2. HM-6617/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested LIMITS LIMITS HM-6617B/883 HM-6617/883 PARAMETER
Address Access Time
SYMBOL
TAVQV
(NOTES 1, 2, 4) CONDITIONS
VCC = 4.5V and 5.5V (Note 5) VCC = 4.5V and 5.5V
GROUP A SUBGROUPS
9, 10, 11
TEMPERATURE
-55oC TA +125oC
MIN
-
MAX
105
MIN
-
MAX
140
UNITS
ns
Output Enable Access Time Chip Enable Access Time Address Setup Time Address Hold Time Chip Enable Low Width Chip Enable High Width
TGLQV
9, 10, 11
-55oC TA +125oC
-
40
-
50
ns
TELQV
VCC = 4.5V and 5.5V
9, 10, 11
-55oC TA +125oC
-
90
-
120
ns
TAVEL TELAX TELEH TEHEL
VCC = 4.5V and 5.5V VCC = 4.5V and 5.5V VCC = 4.5V and 5.5V VCC = 4.5V and 5.5V
9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11
-55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC
15 20 95 40
-
20 25 120 40
-
ns ns ns ns
3
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