Details, datasheet, quote on part number: OM35F120PB
PartOM35F120PB
CategoryDiscrete => Transistors => Insulated Gate Bipolar Transistors (IGBT) => 7290715
Title70 A, 1200 V, N-CHANNEL IGBT
Description
CompanyInternational Rectifier Corp.
DatasheetDownload OM35F120PB datasheet
Specifications 
PolarityN-Channel
Package TypeHERMETIC SEALED PACKAGE-6
Number of units in IC2

 

Features, Applications

OM60L60HB OM45L120HB Preliminary Data Sheet OM50F60HB OM35F120HB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES

High Current, High Voltage 600V And To 75 Amp IGBTs With FRED Diodes, Half-Bridge Configuration
FEATURES

Includes Internal FRED Diode Rugged Package Design Solder Terminals Very Low Saturation Voltage Fast Switching, Low Drive Current Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthroughs

DESCRIPTION

This series of hermetically packaged products feature the latest advanced IGBT technology combined with a package designed specifically for high efficiency, high current applications. They are ideally suited for Hi-Rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Characteristic Symbol Min. Typ. Max. Unit

Collector Emitter Breakdown Voltage, = 250 A, VCE = 0 Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. VCE = 0.8 Max. Rat., VGE = 125C Gate Emitter Leakage Current, VGE 20 V, VCE 0 V IGES V(BR)CES ICES mA nA

Gate-Threshold Voltage, VCE = VGE, 250 A Collector Emitter saturation Voltage, VGE 60 A VGE(th) VCE(sat) 1.8 V

Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE 60 A VGE = 0, VCE = 1.0 mHz gfs Ciss Coss Crss S pF

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VCC 60 A, RGS 2.7 , VGS 100 H td(on) tr td(off) tf nS

Turn-On Delay Time Fall Time Turn-Off Losses VCE(clamp) 60 A VGE = 100 H, = 125C td(on) tf E(OFF) m Ws

Maximum Forward Voltage = 150C Maximum Reverse Current = 125C Reverse Recovery Time 1 A, di/dt 200 A /S Vf Ir trr nS V

Collector Emitter Breakdown Voltage, = 3 mA, VCE = 0 Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. VCE = 0.8 Max. Rat., VGE = 125C Gate Emitter Leakage Current, VGE 20 V, VCE 0 V IGES V(BR)CES ICES mA nA

Gate-Threshold Voltage, VCE = VGE, 4 mA Collector Emitter saturation Voltage, VGE 45 A VGE(th) VCE(sat) 3.0 V

Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE 45 A VGE = 0, VCE = 1.0 mHz gfs Ciss Coss Crss S pF

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VCC 45 A, RGS 2.7 , VGS 100 H td(on) tr td(off) tf nS

Turn-On Delay Time Fall Time Turn-Off Losses VCE(clamp) 45 A VGE = 100 H, = 125C td(on) tf E(OFF) m Ws

Maximum Forward Voltage = 150C Maximum Reverse Current = 125C Reverse Recovery Time 1 A, di/dt 200 A /S Vf Ir trr nS V

Collector Emitter Breakdown Voltage, = 250 A, VCE = 0 Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. VCE = 0.8 Max. Rat., VGE = 125C Gate Emitter Leakage Current, VGE 20 V, VCE 0 V IGES V(BR)CES ICES mA nA

Gate-Threshold Voltage, VCE = VGE, 250 A Collector Emitter saturation Voltage, VGE 50 A VGE(th) VCE(sat) 2.7 V

Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE 50 A VGE = 0, VCE = 1.0 mHz gfs Ciss Coss Crss S pF

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VCC 50 A, RGS 2.7 , VGS 100 H td(on) tr td(off) tf nS

Turn-On Delay Time Fall Time Turn-Off Losses VCE(clamp) 50 A VGE = 100 H, = 125C td(on) tf E(OFF) m Ws

Maximum Forward Voltage = 150C Maximum Reverse Current = 125C Reverse Recovery Time 1 A, di/dt 200 A /S Vf Ir trr nS V

Collector Emitter Breakdown Voltage, = 3 mA, VCE = 0 Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. VCE = 0.8 Max. Rat., VGE = 125C Gate Emitter Leakage Current, VGE 20 V, VCE 0 V IGES V(BR)CES ICES mA nA

Gate-Threshold Voltage, VCE = VGE, 4 mA Collector Emitter saturation Voltage, VGE 35 A VGE(th) VCE(sat) 4.0 V

Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE 35 A VGE = 0, VCE = 1.0 mHz gfs Ciss Coss Crss S pF

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VCC 35 A, RGS 2.7 , VGS 100 H td(on) tr td(off) tf nS

Turn-On Delay Time Fall Time Turn-Off Losses VCE(clamp) 35 A VGE = 100 H, = 125C td(on) tf E(OFF) m Ws

Maximum Forward Voltage = 150C Maximum Reverse Current = 125C Reverse Recovery Time 1 A, di/dt 200 A /S Vf Ir trr nS V


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