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Part: 74LVC126A

Category:
 Logic

Description: 3.3V CMOS Quadruple Bus Buffer Gate With 3-STATE Outputs, 5V Tolerant I/o

Company: Integrated Device Technology, Inc.

Datasheet: Download 74LVC126A datasheet     File size : 291 kB

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Datasheet text preview:
IDT74LVC126A 3.3V CMOS QUADRUPLE BUS BUFFER GATE

INDUSTRIAL TEMPERATURE RANGE

3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS AND 5 VOLT TOLERANT I/O
· 0.5 MICRON CMOS Technology · ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) · VCC = 3.3V ± 0.3V, Normal Range · VCC = 2.7V to 3.6V, Extended Range · CMOS power levels (0.4µ W typ. static) µ · Rail-to-Rail output swing for increased noise margin · All inputs, outputs, and I/Os are 5V tolerant · Supports hot insertion · Available in SOIC, SSOP, and TSSOP packages

IDT74LVC126A

FEATURES:

DESCRIPTION:

DRIVE FEATURES: APPLICATIONS:

· High Output Drivers: ±24mA · Reduced system switching noise

This quadruple bus buffer gate is built using advanced dual metal CMOS technology. The LVC126A features independent line drivers with 3-state outputs. Each output is disabled when the associated output-enable (OE) input is low. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current sourcing capability of the driver. The LVC126A has been designed with a ±24mA output driver. This driver is capable of driving a moderate to heavy load while maintaining speed performance. Inputs can be driven from either 3.3V or 5V devices. This feature allows the use of this device as a translator in a mixed 3.3V/5V system environment.

· 5V and 3.3V mixed voltage systems · Data communication and telecommunication systems

FUNCTIONAL BLOCK DIAGRAM

1OE

1

3OE
3

10

1A

2

1Y

3A

9

8

3Y

2OE

4

4OE
6

13

2A

5

2Y

4A

12

11

4Y

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

INDUSTRIAL TEMPERATURE RANGE
1
© 2 0 0 0 Integrated Device Technology, Inc.

FEBRUARY 2000
DSC-4587/1

IDT74LVC126A 3.3V CMOS QUADRUPLE BUS BUFFER GATE

INDUSTRIAL TEMPERATURE RANGE

PIN CONFIGURATION

ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TSTG IOUT IIK IOK ICC ISS Description Terminal Voltage with Respect to GND Storage Temperature DC Output Current Continuous Clamp Current, VI < 0 or VO < 0 Continuous Current through each VCC or GND Max ­0.5 to +6.5 ­65 to +150 ­50 to +50 ­50 ±100 Unit V °C mA mA mA

1OE 1A 1Y 2OE 2A 2Y

1 2 3 4 5 6 7

14 13 12 11 10 9 8

VCC
4OE 4A 4Y 3OE 3A 3Y

NOTE: 1 . Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

GND

SOIC/ SSOP/ TSSOP TOP VIEW

CAPACITANCE (TA = +25°C, F = 1.0MHz)
Symbol CI N CO U T CI / O Parameter(1) Input Capacitance Output Capacitance I/O Port Capacitance Conditions VIN = 0V VOUT = 0V VIN = 0V Typ. 4.5 5.5 6.5 Max. 6 8 8 Unit pF pF pF

NOTE: 1 . As applicable to the device type.

PIN DESCRIPTION
Pin Names xOE xA xY Inputs 3-State Outputs Description Output Enable Inputs (OE)

FUNCTION TABLE (EACH BUFFER)(1)
Inputs xOE H H L
NOTE: 1 . H = HIGH Voltage Level L = LOW Voltage Level X = Don't Care Z = High-Impedance

Outputs xA H L X xY H L Z

2

IDT74LVC126A 3.3V CMOS QUADRUPLE BUS BUFFER GATE

INDUSTRIAL TEMPERATURE RANGE

DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: Operating Condition: TA = ­40°C to +85°C
Symbol VIH VIL IIH IIL IOZH IOZL IOFF VIK VH ICCL ICCH ICCZ ICC High Impedance Output Current (3-State Output pins) Input/Output Power Off Leakage Clamp Diode Voltage Input Hysteresis Quiescent Power Supply Current VCC = 0V, VIN or VO 5.5V VCC = 2.3V, IIN = ­18mA VCC = 3.3V VCC = 3.6V, VIN = GND or VCC -- -- -- -- -- ­0.7 100 -- ±50 ­1.2 -- 10 µA V mV µA VCC = 3.6V VO = 0 to 5.5V -- -- ±10 µA Parameter Input HIGH Voltage Level Input LOW Voltage Level Input Leakage Current VCC = 2.3V to 2.7V VCC = 2.7V to 3.6V VCC = 2.3V to 2.7V VCC = 2.7V to 3.6V VCC = 3.6V VI = 0 to 5.5V Test Conditions Min. 1.7 2 -- -- -- Typ.(1) -- -- -- -- -- Max. -- -- 0.7 0.8 ±5 µA V Unit V

Quiescent Power Supply Current Variation

One input at VCC - 0.6V, other inputs at VCC or GND

--

--

500

µA

NOTE: 1 . Typical values are at VCC = 3.3V, +25°C ambient.

OUTPUT DRIVE CHARACTERISTICS
Symbol VOH Parameter Output HIGH Voltage VCC = 2.3V VCC = 2.3V VCC = 2.7V VCC = 3V VCC = 3V VOL Output LOW Voltage VCC = 2.3V to 3.6V VCC = 2.3V VCC = 2.7V VCC = 3V IOH = ­ 24mA IOL = 0.1mA IOL = 6mA IOL = 12mA IOL = 12mA IOL = 24mA Test Conditions(1) VCC = 2.3V to 3.6V IOH = ­ 0.1mA IOH = ­ 6mA IOH = ­ 12mA Min. VCC ­ 0.2 2 1.7 2.2 2.4 2.2 -- -- -- -- -- Max. -- -- -- -- -- -- 0.2 0.4 0.7 0.4 0.55 V Unit V

NOTE: 1 . VIH and VIL must be within the min. or max. range shown in the DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE table for the appropriate VCC range. TA = ­ 40°C to + 85°C.

3

IDT74LVC126A 3.3V CMOS QUADRUPLE BUS BUFFER GATE

INDUSTRIAL TEMPERATURE RANGE

OPERATING CHARACTERISTICS, VCC = 3.3V ± 0.3V, TA = 25°C
Symbol CPD CPD Parameter Power Dissipation Capacitance per Gate Outputs Enabled Power Dissipation Capacitance per Gate Outputs Disabled Test Conditions CL = 0pF, f = 10Mhz Typical 22 4 Unit pF

SWITCHING CHARACTERISTICS(1)
VCC = 2.7V Symbol tPLH tPHL tPLH tPHL tPLH tPHL tSK(o) Parameter Propagation Delay xA to xY Output Enable Time xOE to xY Output Disable Time xOE to xY Output Skew(2) -- -- -- 1 ns -- 6.7 1.3 6 ns -- 6.3 1 5.7 ns Min. -- Max. 5.2 VCC = 3.3V ± 0.3V Min. 1 Max. 4.7 Unit ns

NOTES: 1 . See TEST CIRCUITS AND WAVEFORMS. TA = ­ 40°C to + 85°C. 2 Skew between any two outputs of the same package and switching in the same direction.

4

IDT74LVC126A 3.3V CMOS QUADRUPLE BUS BUFFER GATE

INDUSTRIAL TEMPERATURE RANGE

TEST CIRCUITS AND WAVEFORMS TEST CONDITIONS
Symbol VLOAD VIH VT VLZ VHZ CL VCC(1)= 2.5V±0.2V 2 x Vcc Vcc Vcc / 2 150 150 30 VCC(2)= 3.3V±0.3V & 2.7V 6 2.7 1.5 300 300 50 Unit V V V mV mV pF

SAME PHASE INPUT TRANSITION tPLH OUTPUT tPLH OPPOSITE PHASE INPUT TRANSITION tPHL tPHL

VIH VT 0V VOH VT VOL VIH VT 0V

Propagation Delay

LVC QUAD Link

VCC 500 Pulse Generator
(1, 2)

VLOAD Open GND ENABLE CONTROL INPUT tPZL OUTPUT SWITCH NORMALLY CLOSED LOW tPZH OUTPUT SWITCH NORMALLY OPEN HIGH VLOAD/2 VT tPHZ VT 0V tPLZ DISABLE VIH VT 0V VLOAD/2 VLZ VOL VOH VHZ 0V
LVC QUAD Link

VIN D.U.T. RT

VOUT

500 CL
LVC QUAD Link

Test Circuit for All Outputs

DEFINITIONS: CL = Load capacitance: includes jig and probe capacitance. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator. NOTES: 1 . Pulse Generator for All Pulses: Rate 10MHz; tF 2ns; tR 2ns. 2 . Pulse Generator for All Pulses: Rate 10MHz; tF 2.5ns; tR 2.5ns.

NOTE: 1 . Diagram shown for input Control Enable-LOW and input Control Disable-HIGH.

Enable and Disable Times

SWITCH POSITION
Test Open Drain Disable Low Enable Low Disable High Enable High All Other Tests Switch VLOAD GND Open

DATA INPUT TIMING INPUT SYNCHRONOUS CONTROL ASYNCHRONOUS CONTROL

tSU

tH

tREM

INPUT

tPLH1

tPHL1

VIH VT 0V VOH VT VOL VOH VT VOL

tSU

tH

VIH VT 0V VIH VT 0V VIH VT 0V VIH VT 0V
LVC QUAD Link

Set-up, Hold, and Release Times
LOW-HIGH-LOW PULSE tW HIGH-LOW-HIGH PULSE VT
LVC QUAD Link

OUTPUT 1

tSK (x)

tSK (x)

VT

OUTPUT 2 tPLH2 tPHL2

tSK(x) = tPLH2 - tPLH1 or tPHL2 - tPHL1
LVC QUAD Link

Output Skew - tSK(X)
NOTES: 1. For tSK(o) OUTPUT1 and OUTPUT2 are any two outputs. 2. For tSK(b) OUTPUT1 and OUTPUT2 are in the same bank.

Pulse Width

5




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