Details, datasheet, quote on part number: ILQ66-1
PartILQ66-1
CategoryOptoelectronics => Optocouplers
Description
CompanyInfineon Technologies Corporation
DatasheetDownload ILQ66-1 datasheet
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Features, Applications

FEATURES Internal RBE for High Stability Current Transfer Ratio is Tested 2.0 mA and 0.7 mA Input IL/ILD/ILQ66 Series: ­1, 100% min. at IF=2.0 mA, ­2, 300% min. at IF=2.0 mA, ­3, 400% min. at IF=0.7 mA, ­4, 500% min. at IF=2.0 mA, VCE=5.0 V Four Available CTR Categories per Package Type BVCEO>60 V Standard DIP Packages Underwriters Lab File #E52744 V VDE 0884 Available with Option 1

DESCRIPTION IL66, ILD66, and ILQ66 are optically coupled isolators employing Gallium Arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. Maximum Ratings Emitter Each Channel Peak Reverse Voltage.................................... 6.0 V Continuous Forward Current........................ 60 mA Power Dissipation 100 mW Derate Linearly from 25°C................... 1.33 mW/°C Detector (Each Channel) Power Dissipation at 25°C Ambient.......... 150 mW Derate Linearly from 25°C..................... 2.0 mW/°C Package Isolation Test Voltage (t=1.0 sec.)......... 5300 VRMS Total Package Power Dissipation 500 mW Derate Linearly from IL66...................................................... 3.3 mW/°C ILD66................................................. 5.33 mW/°C ILQ66................................................. 6.67 mW/°C Creepage.................................................... 7 min Clearance.................................................... 7 min Comparative Tracking Index.............................175 Isolation Resistance TA=100°C............................. 1011 Storage Temperature................... to +125°C Operating Temperature............... to +100°C Lead Soldering Time at 260°C....................10 sec.

16 Emitter 15 Collector 14 Collector 13 Emitter 12 Emitter 11 Collector 10 Collector 9 Emitter

2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA www.infineon.com/opto (1-888-463-4636) 2­95 March 1, 2000-00

Parameter GaAs Emitter Forward Voltage Reverse Current Capacitance Photodarlington Breakdown Voltage Collector-Emitter Collector-Base (IL66) Leakage Current, Collector-Emitter Capacitance, Collector-Emitter Coupled Characteristics Current Transfer Ratio IL/ILD/ILQ66-3 IL/ILD/ILQ66-4 Saturation Voltage, Collector-Emitter Rise Time -2, -4 Fall Time -2, -4 Rise Time -3 Fall Time -3 VCEsat tr tf CTR % IF=2.0 mA, V IF=2.0 mA, V IF=0.7 mA, V IF=2.0 mA, V IC=10 mA, V IF=2.0 mA, V, RL=100 BVCEO BVCBO ICEO pF IC=1.0 mA, VCE=10 V Symbol Min. Typ. Max. Unit Condition

Figure 1. Forward voltage versus forward current
Figure 3. Normalized non-saturated and saturated CTRce versus LED current
Figure 2. Normalized non-saturated and saturated CTRce versus LED current
Figure 4. Non-saturated and saturated collector emitter current versus LED current

2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA www.infineon.com/opto (1-888-463-4636) 2­96

Figure 9. Low/high propagation delay versus collector load resistance and LED current
Figure 8. High/low propagation delay versus collector g load resistance and LED current

2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA www.infineon.com/opto (1-888-463-4636) 2­97


 

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