Details, datasheet, quote on part number: ILQ31
PartILQ31
CategoryOptoelectronics => Optocouplers => Darlington Output
DescriptionPhotodarlington Optocoupler
CompanyInfineon Technologies Corporation
DatasheetDownload ILQ31 datasheet
Cross ref.Similar parts: PC845
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Features, Applications

FEATURES Current Transfer Ratio IL/ILD/ILQ30/55, 100% min. IL/ILD/ILQ31, 200% min. 125 mA Load Current Rating Fast Rise Time, 10 µS Fast Fall Time, 35 µS Single, Dual and Quad Channel Solid State Reliability Standard DIP Packages Underwriters Lab File #E52744 V VDE 0884 Available with Option 1

DESCRIPTION The IL30/31/55, ILD30/31/55, and ILQ30/31/55 are optically coupled isolators with Gallium Arsenide infrared emitters and silicon photodarlington sensors. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. The Il30/31/55 are equivalent MCA230/MCA231/ MCA255. The ILD30/31/55 re designed to reduce board space requirements in high density applications. Maximum Ratings Emitter (each channel) Peak Reverse Voltage.....................................3.0 V Continuous Forward Current........................ 60 mA Power Dissipation 25°C.........................100 mW Derate Linearly from 25°C.................. 1.33 mW/°C Detector (each channel) Collector-Emitter Breakdown Voltage IL/D/Q55.......................................................55 V Collector (Load) Current............................ 125 mA Power Dissipation Ambient...........150 mW Derate Linearly from 25°C.................... 2.0 mW/°C Package Total Package Power Dissipation ILQ30/31/55.............................................500 mW Derate Linearly from IL30/31/55........................................... 3.3 mW/°C ILD30/31/55...................................... 5.33 mW/°C ILQ30/31/55...................................... 6.67 mW/°C Isolation Test Voltage............................ 5300 VRMS Creepage................................................. 7.0 mm Clearance................................................ 7.0 mm Comparative Tracking Index.............................175 Storage Temperature.................. to +125°C Operating Temperature............... to +100°C Lead Soldering Time 260°C................... 10 sec.

16 Emitter 15 Collector 14 Collector 13 Emitter 12 Emitter 11 Collector 10 Collector 9 Emitter

2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA www.infineon.com/opto (1-888-463-4636) 2­90 March 19, 2001-17

GaAs Emitter (per channel) Forward Voltage Reverse Current Capacitance Detector (per channel) Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Capacitance Package Current Transfer Ratio IL/D/Q30/55 IL/D/Q31 Collector-Emitter Saturation Voltage Isolation Test Voltage Isolation Resistance Coupling Capacitance Rise Time Fall Time CTR V VRMS µs % BVCEO nA pF

Figure 1. Forward voltage versus forward current
Figure 3. Normalized non-saturated and saturated collector-emitter current versus LED current
Figure 2. Normalized non-saturated and saturated CTRce at TA=25°C versus LED current
Figure 4. Normalized collector-base photocurrent versus LED current

2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA www.infineon.com/opto (1-888-463-4636) 2­91

Figure 5. Hfe current gain versus base current
Figure 6. Low to high propagation delay versus collector load resistance and LED current
Figure 7. High to low propagation delay versus collector load resistance and LED current

2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA www.infineon.com/opto (1-888-463-4636) 2­92


 

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