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Details, datasheet, quote on part number:HMC457QS16G
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| Part: | HMC457QS16G |
| Category: | RF & Microwaves => Amplifiers => Power Amplifiers |
| Description: | High Gain, Linear Power Amplifiers for Cellular/3G Infrastructure 1700- 2200 MHz, 26dB Gain, +30.5dBm P1dB, +46dBm OIP3
The HMC457QS16G is a high dynamic range
GaAs InGaP Heterojunction Bipolar Transistor
(HBT) 1 watt MMIC power amplifi er operating
between 1.7 and 2.2 GHz. Packaged in a miniature
16 lead QSOP plastic package, the amplifi er gain
is typically 27 dB from 1.7 to 2.0 GHz and 25 dB
from 2.0 to 2.2 GHz. Utilizing a minimum number of
external components, the amplifi er output IP3 can
be optimized to +45 dBm. The power control (Vpd)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE makes
the HMC457QS16G an ideal power amplifi er for
Cellular/3G base station & repeater applications. |
| Company: | Hittite Microwave Corporation |
| Datasheet: | Download HMC457QS16G datasheet File size : 341 kB |
| Request For quote: | Find where to buy HMC457QS16G
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