Details, datasheet, quote on part number: MURB1620CT-1PBF
PartMURB1620CT-1PBF
CategoryDiscrete Semiconductor Products
TitleDiodes, Rectifier - Array Discrete Semiconductor Product 8A 200V Standard
Description
CompanyVishay/Semiconductors
DatasheetDownload MURB1620CT-1PBF datasheet
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Specifications 
Diode TypeStandard
Diode Configuration1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io) (per Diode)8A
Voltage - Forward (Vf) (Max) @ If975mV @ 8A
Current - Reverse Leakage @ Vr5A @ 200V
Reverse Recovery Time (trr)35ns
SpeedFast Recovery =< 500ns,>200mA (Io)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I&sup2;Pak, TO-262AA
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
MURB1620CT-1PBF photo

 

Features, Applications

Features

Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175C Operating Junction Temperature Lead-Free ("PbF" suffix)

Description/ Applications International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultra fast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

VRRM IF(AV) IFSM IFM TJ, TSTG Peak Repetitive Peak Reverse Voltage Average Rectified Forward Current Total Device, (Rated = 150C Non Repetitive Peak Surge Current Peak Repetitive Forward Current (Rated VR , Square wave, 20 KHz), = 150C Operating Junction and Storage Temperatures 175 C Per Leg Total Device Per Leg Per Leg

VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
V R Rated V R Rated = 200V Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics = 25C (unless otherwise specified)

TJ TStg RthJC RthJA RthCS c Wt Max. Junction Temperature Range Max. Storage Temperature Range Thermal Resistance, Junction to Case Per Leg

Thermal Resistance, Junction to Ambient Per Leg Thermal Resistance, Case to Heatsink Weight
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics

 

Some Part number from the same manufacture Vishay/Semiconductors
MURB1620CTPBF Specifications: Diode Type: Standard ; Diode Configuration: 1 Pair Common Cathode ; Voltage - DC Reverse (Vr) (Max): 200V ; Current - Average Rectified (Io) (per Diode): 8A ; Voltage - Forward (Vf) (Max)
MURB820PBF Specifications: Diode Type: Standard ; Voltage - DC Reverse (Vr) (Max): 200V ; Current - Average Rectified (Io): 8A ; Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A ; Reverse Recovery Time (trr): 35ns ; Current
30CPH03PBF Specifications: Diode Type: Standard ; Diode Configuration: 1 Pair Common Cathode ; Voltage - DC Reverse (Vr) (Max): 300V ; Current - Average Rectified (Io) (per Diode): 15A ; Voltage - Forward (Vf) (Max)
30EPH03PBF Specifications: Diode Type: Standard ; Voltage - DC Reverse (Vr) (Max): 300V ; Current - Average Rectified (Io): 30A ; Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A ; Reverse Recovery Time (trr): 55ns
8ETH03PBF
30EPH06PBF Specifications: Diode Type: Standard ; Voltage - DC Reverse (Vr) (Max): 600V ; Current - Average Rectified (Io): 30A ; Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A ; Reverse Recovery Time (trr): 35ns
8ETH06PBF
MURB1520 Specifications: Diode Type: Standard ; Voltage - DC Reverse (Vr) (Max): 200V ; Current - Average Rectified (Io): 15A ; Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A ; Reverse Recovery Time (trr): 35ns
MURB1520-1
MURB1520TRR
MURB2020CTTRR Specifications: Diode Type: Standard ; Diode Configuration: 1 Pair Common Cathode ; Voltage - DC Reverse (Vr) (Max): 200V ; Current - Average Rectified (Io) (per Diode): 10A ; Voltage - Forward (Vf) (Max)
16CTU04PBF
MURB1020CT
MURB1020CTTRR
MURB1620CT
MURB1620CT-1
MURB1620CTTRL
MURB1620CTTRR
MURB2020CT
MURB2020CTTRL
MURB820 Specifications: Diode Type: Standard ; Voltage - DC Reverse (Vr) (Max): 200V ; Current - Average Rectified (Io): 8A ; Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A ; Reverse Recovery Time (trr): 35ns ; Current
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