|Category||RF & Microwaves => MMICs->GaAs MMICs|
|Description||Millimeterwave Power Amplifiers|
|Company||Fujitsu Microelectronics, Inc.|
|Datasheet||Download FMM5805X datasheet
High Output Power: = 31.0dBm (Typ.) High Gain: = 21.0dB (Typ.) High PAE: add = 30% (Typ.) Impedance Matched Zin/Zout 50 0.25µm PHEMT TechnologyDESCRIPTION
The is a high-gain, high power, 3-stage MMIC amplifier designed for operation in the17.5-20.0 GHz frequency range. This amplifier has an input and output designed for use in 50 systems.This device is well suited for point-to-point communication applications.
Item Drain Voltage Gate Voltage Input Power Storage Temperature Operating Backside Temperature Symbol VDD VGG Pin Tstg Top Condition Rating to +85 Unit V dBm °C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively. 3. This product should be hermetically packaged
Item Frequency Range Output Power 1 dB G.C.P. Power Gain 1 dB G.C.P. Drain Current Power-Added Efficiency Input Return Loss Output Return Loss Symbol P1dB G1dB Iddrf add RLi RLo VDD = 6V IDD = 650mA (Typ.) = ZL Conditions Min. Limits Typ. Max. Unit GHz 26 950 dBm % dB
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