Details, datasheet, quote on part number: FP2250QFN-2
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => PHEMTs
DescriptionDiscrete, Fets, Phemt
DatasheetDownload FP2250QFN-2 datasheet


Features, Applications

FEATURES 29 dBm Output Power at 1-dB Compression 17 dB Power Gain at 2 GHz 1.0 dB Noise Figure at 2 GHz 42 dBm Output IP3 50% Power-Added Efficiency

DESCRIPTION AND APPLICATIONS The is a high performance, leadless, encapsulated packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes 2250 m Schottky barrier gate, defined by electronbeam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable highpower applications. The FP2250's active areas are passivated with Si3N4, and the QFN package is ideal for low-cost, high-performance applications that require a surface-mount package. Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems to 10 GHz. ELECTRICAL SPECIFICATIONS @ TAmbient = 25C

Parameter Saturated Drain-Source Current FP2250QFN-1 FP2250QFN-2 Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Noise Figure Output Third-Order Intercept Point Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude All RF data tested at 2.0 GHz Symbol IDSS Test Conditions VDS 2 V; VGS V mA dBm % dB dBm A V Min Typ Max Units

Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Test Conditions TAmbient C TAmbient C TAmbient C TAmbient C TAmbient C TAmbient C TAmbient C

Notes: Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. Power Dissipation defined as: PTOT (PDC + PIN) POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power Absolute Maximum Power Dissipation to be de-rated as follows above 25C: PTOT= (0.025W/C) x TPACK where TPACK = source tab lead temperature. (Bottom of the Package) This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these

HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.

All information and specifications are subject to change without notice.

Phone: (408) 988-1845 Fax: (408) 970-9950 http:// Revised: 10/18/02 Email:


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