Details, datasheet, quote on part number: FJPF3835TU
PartFJPF3835TU
Category
DescriptionNPN Epitaxial Silicon Transistor
CompanyFairchild Semiconductor
DatasheetDownload FJPF3835TU datasheet
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Features, Applications

High Current Capability : IC=8A High Power Dissipation Wide S.O.A
Absolute Maximum Ratings TC=25C unless otherwise noted

Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature

Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tF tSTG

Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current

Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Fall Time Storage Time





 

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