Details, datasheet, quote on part number: FJN4306R
PartFJN4306R
Category
DescriptionFJN4306R - PNP Epitaxial Silicon Transistor
CompanyFairchild Semiconductor
DatasheetDownload FJN4306R datasheet
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Features, Applications

Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJN3306R

Absolute Maximum Ratings Ta=25C unless otherwise noted

Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value Units mW C

Symbol BVCBO BVCEO ICBO hFE VCE(sat) Cob fT VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio Test Condition IC= -10A, IE=0 IC= -100A, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= IE=0 f=1.0MHz VCE= -10V, IC= -5mA VCE= -5V, IC= -100A VCE= -0.3V, IC= V pF MHz V K Min. -50 -0.1 Typ. Max. Units V A




 

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