Details, datasheet, quote on part number: FJE3303H1
DescriptionNPN Silicon Transistor Planar Silicon Transistor
CompanyFairchild Semiconductor
DatasheetDownload FJE3303H1 datasheet
Cross ref.Similar parts: ST13003, STT13005D-K
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Features, Applications

High Speed Switching Suitable for Electronic Ballast and Switching Regulator
Absolute Maximum Ratings TC=25C unless otherwise noted

Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Power Dissipation(Ta=25C) Junction Temperature Storage Temperature Value Units C

Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current *DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=1.5A, IB=0.5A VBE (sat) fT tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time IB2=-0.2A, RL MHz s Min. Typ. Max. Units V A

Figure 7. Forward Biased Safe Operating Area
Figure 8. Reverse Biased Safe Operating Area


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