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Details, datasheet, quote on part number:13PD100-S
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Datasheet text preview:
High Speed InGaAs p-i-n Photodiode 13PD100-S
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region mounted on a metallized ceramic substrate, is the largest standard device enabling a 1 GHz frequency cutoff. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by a 100% purge burn-in (200oC, 15 hours, Vr = 20V). Chips can be attached and wire bonded to standard submounts, customer-supplied submounts or other specified packages.
Features
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics
Parameters
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Test Conditions
-5V -5V 1300nm 1500nm (-3dB)
Min
0.80 -
Typ
0.5 0.9 0.9 1.0 1.0
Max
-20 2 0.5 -
Units
Volts nA pF A/W A/W ns GHz
Absolute Maximum Ratings
30 Volts 5 mA 500 µA o -40 C to + 85oC -40oC to + 85oC 250oC
829 Flynn Road, Camarillo, CA 93012
tel (805) 445-4500
fax (805) 445-4502.
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