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Details, datasheet, quote on part number:HMPP-3862
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Datasheet text preview:
Agilent HMPP-386x Series MiniPak Surface Mount RF PIN Diodes
Data Sheet
Features · Surface mount MiniPak package low height, 0.7 mm (0.028") max. small footprint, 1.75 mm2 (0.0028 inch2) · Better thermal conductivity for higher power dissipation Description/Applications These ultra-miniature products represent the blending of Agilent Technologies' proven semiconductor and the latest in leadless packaging technology. The HMPP-386x series of general purpose PIN diodes are designed for two classes of applications. The first is attenuators where current consumption is the most important design consideration. The second application for this series of diodes is in switches where low capacitance with no reverse bias is the driving issue for the designer. The low dielectric relaxation frequency of the HMPP-386x insures that low capacitance can be reached at zero volts reverse bias at frequencies above 1 GHz, making this PIN diode ideal for hand held applications. Low junction capacitance of the PIN diode chip, combined with ultra low package parasitics, mean that these products may be used at frequencies which are higher than the upper limit for conventional PIN diodes. Note that Agilent's manufacturing techniques assure that dice packaged in pairs are taken from adjacent sites on the wafer, assuring the highest degree of match. · Single and dual versions · Matched diodes for consistent performance · Low capacitance at zero volts · Low resistance · Low FIT (Failure in Time) rate* · Six-sigma quality level
* For more information, see the Surface Mount Schottky Reliability Data Sheet.
Pin Connections and Package Marking
3 4
AA
2 1 Product code Date code
Package Lead Code Identification (Top View)
Single 3 4 3 Anti-parallel 4 3 Parallel 4
Notes: 1. Package marking provides orientation and identification. 2. See "Electrical Specifications" for appropriate package marking.
2 #0
1
2 #2
1
2 #5
1
HMPP-386x Series Absolute Maximum Ratings [1], TC = 25°C Symbol
If PIV Tj Tstg jc
Parameter
Forward Current (1 µs pulse) Peak Inverse Voltage Junction Temperature Storage Temperature Thermal Resistance [2]
Units
Amp V °C °C °C/W
Value
1 100 150 -65 to +150 150
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications, TC = +25°C, each diode
Part Number HMPP3860 3862 3865 Test Conditions Package Marking Code H F E Lead Code 0 2 5 Configuration Single Anti-parallel Parallel Minimum Breakdown Voltage (V) 50 Typical Series Resistance () 3.0/1.5*
VR = VBR Measure IR 10 µA
IF = 10 mA f = 100 MHz *IF = 100 mA
Typical Parameters, TC = +25°C
Part Number HMPP3860 3862 3865 Test Conditions Total Resistance RT () 22 Carrier Lifetime (ns) 500 Reverse Recovery Time Trr (ns) 80 Total Capacitance CT (pF) 0.20
2 3 4 5
IF = 1 mA f = 100 MHz
IF = 50 mA TR = 250 mA
VR = 10V IF = 20 mA 90% Recovery
VR = 50 V f = 1 MHz
2
HMPP-386x Series Typical Performance, Tc = 25°C, each diode
0.35
1000
INPUT INTERCEPT POINT (dBm)
TA = +85°C TA = +25°C TA = 55°C
120 115 110 105 100 95 90 85
TOTAL CAPACITANCE (pF)
RESISTANCE (OHMS)
0.30 1 MHz 0.25 100 MHz 0.20 1 GHz
Diode Mounted as a Series Switch in a 50 Microstrip and Tested at 123 MHz Intercept point will be higher at higher frequencies
100
10
0.15
0
2
4
6
8
10 12 14 16 18 20
1 0.01
0.1
1
10
100
1
10 IF FORWARD BIAS CURRENT (mA)
30
REVERSE VOLTAGE (V)
BIAS CURRENT (mA)
Figure 1. RF Capacitance vs. Reverse Bias.
Figure 2. Typical RF Resistance vs. Forward Bias Current.
Figure 3. 2nd Harmonic Input Intercept Point vs. Forward Bias Current for Switch Diodes.
1000
100
Trr REVERSE RECOVERY TIME (ns)
IF FORWARD CURRENT (mA)
10
VR = 5 V 100 VR = 10 V VR = 20 V
1
0.1 125°C 25°C 0.6 50°C 0.8 1.0 1.2
10 10 20 FORWARD CURRENT (mA) 30
0.01 0 0.2 0.4 VF FORWARD VOLTAGE (mA)
Figure 4. Reverse Recovery Time vs. Forward Current for Various Reverse Voltages.
Figure 5. Forward Current vs. Forward Voltage.
Typical Applications
RF COMMON
RF COMMON
2 1 RF 1
3 4 RF 2
RF 1 2 1 2 1 3 4 3 4 RF 2
BIAS 1
BIAS 2
BIAS
Figure 6. Simple SPDT Switch Using Only Positive Bias.
Figure 7. High Isolation SPDT Switch Using Dual Bias.
3
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