Details, datasheet, quote on part number: S25FL004D
PartS25FL004D
CategoryMemory => Flash => 4 Mb
Description4 Megabit CMOS 3.0 Volt Flash Memory With 50 MHZ Spi Bus Interface<<<>>>the S25FL004D Device is a 3.0 Volt (2.7 V to 3.6 V) Single Power Supply Flash Memory Device. S25FL004D Consists of Eight Sectors, Each With 512 KB Memory. Data Appears on si Input Pin When Inputting Data Into The Memory And on The so Output Pin When Outputting Data From The Memory. The Devices Are Designed to be Programmed In-system With The Standard System 3.0 Volt VCC Supply. The Memory CAN be Programmed 1 to 256 Bytes at a Time, Using The Page Program Instruction.<<<>>>the Memory Supports Sector Erase And Bulk Erase Instructions.each Device Requires Only a 3.0 Volt Power Supply (2.7 V to 3.6 V) For Both Read And Write Functions. Internally Generated And Regulated Voltages Are Provided For The Program Operations.<<<>>>this Device Does Not Require VPP Supply.
CompanyAdvanced Micro Devices, Inc.
DatasheetDownload S25FL004D datasheet
  

 

Features, Applications
4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface

Single power supply operation Full voltage range: 3.6 V read and program operations Memory Architecture Eight sectors with 512 Kb each Program Page Program (up to 256 bytes) 1.5 ms (typical) Program cycles are on a page by page basis Erase 0.5 s typical sector erase time 4 s typical bulk erase time Endurance 100,000 cycles per sector typical Data Retention 20 years typical Device ID Electronic signature Process Technology Manufactured 0.25 µm process technology Package Option Industry Standard Pinouts SO (208mil) package 8-contact WSON leadless package (6x5mm)

Speed 50 MHz clock rate (maximum) Power Saving Standby Mode Standby Mode 1 µA (typical)

Memory Protection W# pin works in conjunction with Status Register Bits to protect specified memory areas Status Register Block Protection bits BP0) in status register configure parts of memory as readonly

The S25FL004D device a 3.0 Volt 3.6 V) single power supply Flash memory device. S25FL004D consists of eight sectors, each with 512 Kb memory. Data appears on SI input pin when inputting data into the memory and on the SO output pin when outputting data from the memory. The devices are designed to be programmed in-system with the standard system 3.0 Volt VCC supply. The memory can be programmed to 256 bytes at a time, using the Page Program instruction. The memory supports Sector Erase and Bulk Erase instructions. Each device requires only a 3.0 Volt power supply 3.6 V) for both read and write functions. Internally generated and regulated voltages are provided for the program operations. This device does not require VPP supply.

Block Diagram.4 Connection Diagrams.5 Input/Output Descriptions. 5 Logic Symbol. 5 Ordering Information.6 Signal Description.7 SPI Modes...................................................................................................7

Figure 1. Bus Master and Memory Devices on the SPI Bus....... 8 Figure 2. SPI Modes Supported............................................ 8

Figure 11. Page Program (PP) Instruction Sequence.............. 20
Figure 12. Sector Erase (SE) Instruction Sequence................ 21
Figure 13. Bulk Erase (BE) Instruction Sequence................... 22
Figure 14. Deep Power Down (DP) Instruction Sequence........ 23
Release from Deep Power Down (RES)....................................... 23

Figure 15. Release from Deep Power Down I nstruction Sequence.......................................................... 24

Operating Features.9 Page Programming.................................................................................. 9 Sector Erase, or Bulk Erase................................................................. 9 Polling During a Write, Program, or Erase Cycle........................ 9 Status Register......................................................................................... 9 Protection Modes..................................................................................10

Release from Deep Power Down and Read Electronic Signature (RES)...................................................................................... 24

Figure 16. Release from Deep Power Down and Read Electronic Signature (RES) Instruction Sequence................................. 25

Figure 17. Power-Up Timing............................................... 27 Figure 18. Power-Down and Voltage Drop............................ 27 Table 5. Power-Up Timing................................................. 28

Figure 4. Write Enable (WREN) Instruction Sequence............. 14

Initial Delivery State. 28 Maximum Rating. 28 Absolute Maximum Ratings. 28 Operating Ranges. 28 DC Characteristics. 29

Figure 5. Write Disable (WRDI) Instruction Sequence............ 14

Figure 19. AC Measurements I/O Waveform......................... 30 Table 7. Test Specifications............................................... 30 Table 8. AC Characteristics................................................ 31 Figure 20. SPI Mode 0 (0,0) Input Timing............................. 32 Figure 21. SPI Mode 0 (0,0) Output Timing.......................... 32 Figure 22. HOLD# Timing.................................................. 33 Figure 23. Write Protect Setup and Hold Timing during WRSR when SRWD=1......................................................................... 33

Figure 6. Read Status Register (RDSR) Instruction Sequence........................................................ 15 Figure 7. Status Register Format......................................... 15

Figure 8. Write Status Register (WRSR) Instruction Sequence........................................................ 17 Table 4. Protection Modes..................................................17

Figure 9. Read Data Bytes (READ) Instruction Sequence........ 18
Read Data Bytes at Higher Speed (FAST_READ)....................... 18

Figure 10. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence..................................... 19

Physical Dimensions. S08 wide--8-pin Plastic Small Outline 208mils Body Width Package................................................................................................... 34 8-Contact WSON x 5mm) Leadless Package.................35 Revision Summary. 36


 

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