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Details, datasheet, quote on part number:TP0202T-T1
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Datasheet text preview:
TP0202T
P-Channel Enhancement-Mode MOS Transistor
Product Summary
V(BR)DSS Min (V)
20
rDS(on) Max (W)
1.4 @ VGS = 10 V 3.5 @ VGS = 4.5 V
VGS(th) (V)
1.3 to 3 V 1.3 to 3 V
ID (A)
0.31 0.16
For applications information see AN804.
Features
D D D D D High-Side Switching Low On-Resistance: 0.9 W Low Threshold: 2.1 V Fast Switching Speed: 18 ns Low Input Capacitance: 55 pF
Benefits
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer
Applications
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control
TO-236 (SOT-23)
G
1 3 D
S
2
Top View TP0202T (P3)* *Marking Code for TO-236
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Drain Current (T 150_C) Pulsed Drain Currenta Power Dissipation Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #2812. Applications information may also be obtained via FaxBack, request document #9804. TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VD S VG S ID ID M PD RthJA TJ, Tstg
Limit
20 "20 0.31 0.25 0.75 0.2 0.128 625 55 to 150
Unit
V
A
W _C/W _C
Siliconix S-44505--Rev. E, 06-Sep-94
1
TP0202T
Specificationsa
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currentc Drain-Source On-Resistancec On-Resistance Forward Transconductance c Diode Forward Voltage V(BR)DSS VG S ( t h ) IGSS IDSS ID(on) rD S ( o n ) gfs VS D VGS = 0 V, ID = 10 mA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V TJ = 55_C VDS = 10 V, VGS = 10 V VGS = 4.5 V, ID = 0.05 A VGS = 10 V, ID = 0.2 A VDS = 10 V, ID = 0.2 A IS = 0.25 A, VGS = 0 V 250 0.5 0.75 1.7 0.9 600 0.9 1.5 3.5 1.4 20 1.3 25 2.1 3 "100 1 10 V nA mA A W mS V
Symbol
Test Conditions
Min
Typb
Max
Unit
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qg s Qg d Ciss Coss Crss VDS = 15 V, VGS = 0 V, f = 1 MHz VDS 16 V, VGS =10 V, ID ^ 200 mA 2700 500 600 55 50 18 pF pC
Switchingd
Turn-On Time Time td(on) tr Turn-Off Time td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = 15 V, RL = 75 W V ID ^ 0.2 A, VGEN = -10 V RG = 6 W 8 20 20 30 12 30 ns 35 40
VPBP02
2
Siliconix S-44505--Rev. E, 06-Sep-94
TP0202T
Typical Characteristics (25_C Unless Otherwise Noted)
0.8
Output Characteristics
5V
1.0
Transfer Characteristics
TC = 55_C
0.8 I D Drain Current (A) I D Drain Current (A) 0.6 VGS = 10, 9, 8, 7, 6 V
25_C 125_C
0.6
0.4 4V 0.2 3V 0 0 1 2 3 4 VDS Drain-to-Source Voltage (V)
0.4
0.2
0 0 1.5 3.0 4.5 6.0 VGS Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-Source Voltage
5
On-Resistance vs. Drain Current
rDS(on) = 200 mA 3
rDS(on) On-Resistance ( W )
rDS(on) On-Resistance ( W )
4
4
3 VGS = 4.5 V 2 VGS = 10 V 1
2
1
50 mA
0 0 4 8 12 16 20 VGS Gate-to-Source Voltage (V)
0 0 0.1 0.2 0.3 0.4 0.5 ID Drain Current (A)
180 160 140 C Capacitance (pF) 120 100 80 60 40 20 0 0 4 Crss Ciss Coss
Capacitance
VGS Gate-to-Source Voltage (V)
20 ID = 200 mA 15
Gate Charge
10
VDS @ 10 V VDS @ 16 V
5
0 8 12 16 20 0 1000 2000 3000 4000 5000 6000 VDS Drain-to-Source Voltage (V) Qg Total Gate Charge (nC)
Siliconix S-44505--Rev. E, 06-Sep-94
3
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