|
Details, datasheet, quote on part number:M29F400T-55
| |
Datasheet text preview:
M29F400T M29F400B
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory
D ATA BRIEFING
5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy Output MEMORY BLOCKS Boot Block (Top or Bottom location) Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION Defectivity below 1ppm/year ELECTRONIC SIGNATURE Manufacturer Code: 0020h Device Code, M29F400T: 00D5h Device Code, M29F400B: 00D6h DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level a nd programmed in-system on a Byte-by-Byte or Wordby-Word basis using only a single 5V VC C supply. For Program and Erase operations the necessary high voltages are generate d internally. The device can also be programmed in standard programmers. The array matrix organisation al lows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotect ed to make changes in the application.
B29F400/807
Complete data available on DATA-on-DISC CD-ROM or a t www.st.com
44
1
T SOP48 (N) 12 x 20 mm
SO44 (M)
Logic Diagram
VCC
18 A0-A17 W E G RP M29F400T M29F400B
15 DQ0-DQ14 DQ15A1 BYTE RB
VSS
AI01726B
1/3
M29F400T, M29F400B
TSOP Pin Connections
A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC A17 A7 A6 A5 A4 A3 A2 A1 1 48 A16 BYTE VSS DQ15A1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0
TSOP Reverse Pin Connections
A16 BYTE VSS DQ15A1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 1 48 A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC A17 A7 A6 A5 A4 A3 A2 A1
12 13
M29F400T M29F400B (Normal)
37 36
12 13
M29F400T M29F400B (Reverse)
37 36
24
25
AI01727B
24
25
AI01728B
Warning: NC = Not Connected.
Warning: NC = Not Connected.
SO Pin Connections
Signal Names
A0-A17 Address Inputs Data Input/Outputs, Command Inputs Data Input/Outputs Data Input/Output or Address Input Chip Enable Output Enable Write Enable Reset / Block Temporary U nprotect Ready/Busy Output Byte/Word Organisation Supply Voltage Ground
NC RB A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11
1 2 3 4 5 6 7 8 9 10 11 M29F400T 12 M29F400B 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
RP W A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE VSS DQ15A1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC
D Q0-DQ7 D Q8-DQ14 D Q15A1 E G W RP RB B YTE VC C VSS
AI01729B
Warning: NC = Not Connected. 2/3
M29F400T, M29F400B
ORDERING INFORMATION SCHEME
Example:
M29F400T
-55
N
1
TR
Operating Voltage F 5V ± 10% R TR
Op tion Reverse Pinout Tape & Reel Packing
Array M atrix T B Top Boot Bottom Boot
Speed -55(1) 55ns -70 70ns -90 90ns -120 120ns M N
Package TSOP48 12 x 20mm SO44 1 6 3
Temp. Range 0 to 70 °C 40 to 85 °C 40 to 125 °C
Note: 1. Speed obtained w ith High S peed Measurement Conditions.
Devices are shipped from the factory with the memory content erased (to FFh). For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
3/3
|
|
