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Part: 74VHC14T
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Datasheet: Download 74VHC14T datasheet File size : 110 kB
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74VHC14
HEX SCHMITT INVERTER
PRELIMINARY DATA
s s
s s
s
s
s
s s
HIGH SPEED: tPD = 5.5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 14 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (Max.)
M (Micro Package)
T (TSSOP Package)
ORDER CODES : 74VHC14M 74VHC14T Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This d evice can be used to interface 5V to 3V. Pin configuration and function are the same as those of the VHC04 but the VHC14 has hysteresis. This together with its schmitt trigger function allows it to be used on line receivers with slow rise/fall input segnals. All inputs and outputs are equipped with protection circuits against s tatic discharge, giving them 2KV ESD immunity and transient excess voltage.
DESCRIPTION The 74VHC14 is an advanced high-speed CMOS HEX SCHMITT INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technolog y. I t has similar high speed performance of equivalent Bipolar Schottky TTL combined with tru e CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.
PIN CONNECTION AND IEC LOGIC SYMBOLS
March 1998
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74VHC14
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
P I N No 1, 3, 5, 9, 11, 13 2, 4, 6, 8, 10, 12 7 14 S YMB O L 1A to 6A 1Y to 6Y GND VCC NAM E AN D F UNC T I O N D at a Inp ut s D at a Out puts G ro und (0 V) P os itiv e S upply V olt age
TRUTH TABLE
A L H Y H L
ABSOLUTE MAXIMUM RATINGS
S y mb o l VCC VI VO II K IOK IO Tstg TL Supply Vo lt age DC In put Volta ge DC Ou tpu t Vo lt age DC In put Diode Curr ent DC Ou tpu t D iode C u rrent DC Ou tpu t C urrent Stor age T emperat ur e Lead T empe ratu re (10 se c) P arame t er V al u e -0.5 to + 7.0 -0.5 to + 7.0 -0.5 t o VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +150 300 Un i t V V V mA mA mA mA
o o
ICC or IGND DC VCC or Gro und Current
C C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
S y mb o l VCC VI VO Top dt/dv Supply Vo lt age Inp ut Volta ge Out put V oltage Ope rat ing T empe ratu re Inp ut Rise a nd Fa ll T im e ( s ee not e 1) (VCC = 3.3 ± 0. 3V) (VCC = 5.0 ± 0.5 V ) P arame t er Va lu e 2.0 to 5.5 0 to 5.5 0 to VCC -40 to +85 0 to 100 0 to 20 Un i t V V V
o
C
ns/V ns/V
1) VIN from 30% to 70% of VCC
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74VHC14
DC SPECIFICATIONS
S ym b o l P ar amet e r T est Co n d i t i o n s V CC ( V) Vt+ High Level T hreshold Volt age Low L evel Thre shold Volt age Hys te res is V o ltage 3. 0 4.5 5.5 Vt3. 0 4.5 5.5 Vh 3. 0 4.5 5.5 VOH High Level O ut put Volt age 2.0 3.0 4.5 3.0 4.5 VOL Low L evel Outp ut Volt age 2.0 3.0 4. 5 3.0 4.5 II ICC Input Leakage C urrent Quies cent Supply Current 0 to 5.5 5.5 VI = VI H
(*)
V al u e T A = 2 5 oC M in. 2.2 3.15 3.85 0.9 1.35 1.65 0.3 0.4 0.5 1.2 1.4 1.6 2.0 3.0 4.5 0.3 0.4 0.5 1.9 2.9 4.4 2.48 3.8 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 ±0.1 2 0.1 0.1 0.1 0.44 0.44 ± 1.0 20 T yp . M ax. - 40 t o 85 o C Mi n. 2.2 3.15 3.85 0.9 1.35 1.65 1.2 1.4 1.6 M ax.
Unit
V
V
V
IO=-50 µA VI(*) = VIL IO=-50 µA IO=-50 µA IO=-4 mA IO=-8 mA IO=50 µA IO=50 µA IO=50 µA IO=4 mA IO=8 mA VI = 5.5V or GN D VI = VCC or GND
1.9 2.9 4.4 2.58 3.94
V
V
µA µA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
S ym b o l P ar amet e r V CC ( V) tPLH tPHL Propagati on D e lay Tim e 3.3(*) 3.3(*) 5.0 5.0( **)
(*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5V ± 0.5V
( **)
T e st Co n d i t i o n
C L = 15 pF C L = 50 pF C L = 15 pF C L = 50 pF
V al u e T A = 2 5 oC M i n . T yp . M ax. 8.3 12.8 10.8 16.3 5.5 7.0 8.6 10.6
Unit - 40 t o Mi n. 1.0 1.0 1.0 1.0 85 o C M ax. 15.0 18.5 10.0 12.0
ns
CAPACITIVE CHARACTERISTICS
S ym b o l P ar amet e r T est Co n d i t i o n s
o
V al u e TA = 25 C M in. T yp . 4 21 M ax. 10 - 40 t o 85 C Mi n. M ax. 10
o
Unit
CIN C PD
Input Capacita nce Power D is sipat ion Capacit ance (n ote 1)
pF pF
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD · VCC · fIN + ICC/6 (per Gate)
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74VHC14
DYNAMIC SWITCHING CHARACTERISTICS
S ym b o l P ar amet e r T est Co n d i t i o n s V CC ( V) VOLP VOLV VIH D VILD Dynam ic Low V oltag e Quiet O utput ( note 1, 2) Dynam ic High Vo lt age Input (note 1 , 3) Dynam ic Low V oltag e Input (note 1 , 3) 5.0 -0.8 5.0 5.0 C L = 50 pF 3.5 1.5 M in. T yp . 0.3 -0.3 V V al u e T A = 2 5 oC M ax. 0.8 - 40 t o 85 o C Mi n. M ax. Unit
1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n -1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.
TEST CIRCUIT
CL = 15/50 pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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74VHC14
SO-14 MECHANICAL DATA
DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010
P013G
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