Details, datasheet, quote on part number: CSD22206W
PartCSD22206W
CategorySemiconductors => Power Management => Power MOSFET => P-Channel MOSFET Transistor
Part familyCSD22206W 8-V P-Channel NexFET™ Power MOSFET
TitleMOSFET 8-V P-Channel NexFET Power MOSFET 9-DSBGA -55 to 150
Description8-V P-Channel NexFET™ Power MOSFET 9-DSBGA -55 to 150
CompanyTexas Instruments Inc.
StatusACTIVE
ROHSY
SampleYes
DatasheetDownload CSD22206W datasheet
Specifications 
TechnologySi
Mounting StyleSMD/SMT
Package/CaseDSBGA-9
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 8 V
Id - Continuous Drain Current- 5 A
Rds On - Drain-Source Resistance9.1 mOhm
Vgs th - Gate-Source Threshold Voltage- 1.05 V
Vgs - Gate-Source Voltage- 6 V
Qg - Gate Charge14.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
TradenameNexFET
PackagingCut Tape, eel, Reel
  Mecanical Data
Pin nbPackage typeInd stdJEDEC codePackage qtyCarrierDevice markWidth (mm)Length (mm)Thick (mm)Pitch (mm)
9YZFDSBGAS-XBGA-N3000LARGE T&R22206 1.751.75.5
Spice Model
CSD68841W PSpice Model - ZIP (06/16/2017)
CSD22206W PSpice Model - ZIP (06/16/2017)

Others parts numbering
CSD22206WT: MOSFET 8-V P-Channel NexFET Power MOSFET

 

Features, Applications

Ultra-Low Resistance Small Footprint 1.5 mm Lead Free Gate ESD Protection RoHS Compliant Halogen Free Gate-Source Voltage Clamp

= 25C VDS Qg Qgd RDS(on) VGS(th) Drain-to-Source Voltage Gate Charge Total (4.5 V) Gate Charge Gate-to-Drain Drain-to-Source On Resistance Threshold Voltage TYPICAL VALUE 11.2 1.8 VGS 2.5 V VGS 6.8 4.7 UNIT m V

Load Switch Applications Battery Management Battery Protection
QTY 250 7-Inch Reel MEDIA PACKAGE 1.50-mm Wafer BGA Package SHIP Tape and Reel

This 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

= 25C VDS VGS ID PD TJ, Tstg Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current(1) Pulsed Drain Current(2) Power Dissipation Operating Junction, Storage Temperature VALUE to 150 UNIT C

(1) Device operating at a temperature 105C. (2) Typ RJA = 75C/W ,mounted on FR4 material with maximum Cu mounting area, pulse width 100 s, duty cycle 1%.

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.

Receiving Notification of Documentation Updates.... Community Resources.............................................. Trademarks............................................................... Electrostatic Discharge Caution................................ Glossary....................................................................

5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information.................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4

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PARAMETER STATIC CHARACTERISTICS BVDSS BVGSS IDSS IGSS VGS(th) RDS(on) gfs CISS COSS CRSS RG Qg Qgd Qgs Qg(th) QOSS td(on) tr td(off) tf VSD Qrr trr Drain-to-source voltage Gate-to-source voltage Drain-to-source leakage current Gate-to-source leakage current Gate-to-source threshold voltage Drain-to-source on resistance Transconductance Input capacitance Output capacitance Reverse transfer capacitance Series gate resistance Gate charge total (4.5 V) Gate charge gate-to-drain Gate charge gate-to-source Gate charge at Vth Output charge Turnon delay time Rise time Turnoff delay time Fall time Diode forward voltage Reverse recovery charge Reverse recovery time IDS 2 A, VGS 0 V VDS= 1 A, di/dt = 200 A/s VDS 4 V, VGS 4.5 V, IDS = 0 VDS 4 V, VGS 0 V VDS 2 A VGS 0 V, VDS = 1 MHz VGS 0 V, IDS 250 A VDS 250 A VGS 0 V, VDS 6.4 V VDS 0 V, VGS 6 V VDS = VGS, IDS 250 A VGS 2.5 V, IDS 2 A VGS 4.5 V, IDS 2 A VDS 0.8 V, IDS nC ns TEST CONDITIONS MIN TYP MAX UNIT

THERMAL METRIC RJA (1) (2) Junction-to-ambient thermal resistance (1) Junction-to-ambient thermal resistance (2) TYPICAL VALUES 75 230 UNIT C/W

Device mounted on FR4 material with 2-oz (0.071-mm) thick Cu. Device mounted on FR4 material with minimum Cu mounting area.


 

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